NTGD31

NTGD3148NT1G vs NTGD3147FT1G vs NTGD3133PT1G

 
PartNumberNTGD3148NT1GNTGD3147FT1GNTGD3133PT1G
DescriptionMOSFET NFET 20V 3A 70MOHM TSOP6MOSFET FETKY 20V 2.5A 145M TSOP6MOSFET 2P-CH 20V 1.6A 6TSOP
ManufacturerON SemiconductorON Semiconductor-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTSOP-6TSOP-6-
Number of Channels2 Channel1 Channel-
Transistor PolarityN-ChannelP-Channel-
Vds Drain Source Breakdown Voltage20 V20 V-
Id Continuous Drain Current3.5 A2.2 A-
Rds On Drain Source Resistance70 mOhms, 70 mOhms145 mOhms-
Vgs th Gate Source Threshold Voltage500 mV--
Vgs Gate Source Voltage4.5 V12 V-
Qg Gate Charge3.8 nC, 3.8 nC--
Minimum Operating Temperature- 50 C- 25 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation1.1 W1 W-
ConfigurationDualSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
Height0.94 mm0.94 mm-
Length3 mm3 mm-
ProductMOSFET Small SignalMOSFET Small Signal-
Transistor Type2 N-Channel1 P-Channel-
TypePower Trench MOSFET--
Width1.5 mm1.5 mm-
BrandON SemiconductorON Semiconductor-
Forward Transconductance Min6.2 S, 6.2 S--
Fall Time1.6 ns, 1.6 ns6.2 ns-
Product TypeMOSFETMOSFET-
Rise Time11.2 ns, 11.2 ns6.2 ns-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time12.8 ns, 12.8 ns14.5 ns-
Typical Turn On Delay Time7.4 ns, 7.4 ns7.5 ns-
Unit Weight0.000705 oz0.000705 oz-
制造商 型号 描述 RFQ
ON Semiconductor
ON Semiconductor
NTGD3148NT1G MOSFET NFET 20V 3A 70MOHM TSOP6
NTGD3149CT1G MOSFET COMP TSOP6 20V 3A TR
NTGD3147FT1G MOSFET FETKY 20V 2.5A 145M TSOP6
NTGD3133PT1G MOSFET 2P-CH 20V 1.6A 6TSOP
NTGD3147FT1G MOSFET P-CH 20V 2.2A 6-TSOP
NTGD3148NT1G MOSFET 2N-CH 20V 3A 6TSOP
NTGD3149CT1G MOSFET N/P-CH 20V 6-TSOP
NTGD3122C 全新原装
NTGD3122CT1G 全新原装
NTGD3148N 全新原装
NTGD314PCT1G 全新原装
NTGD3133PT1H PFET TSOP6 20V 2.3A 145MO
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