![]() | ![]() | ![]() | |
| PartNumber | NTJD5121NT1 | NTJD5121 | NTJD5121N |
| Description | |||
| Manufacturer | - | ON | ON |
| Product Category | - | FETs - Arrays | IC Chips |
| Series | - | - | NTJD5121N |
| Packaging | - | - | Digi-ReelR Alternate Packaging |
| Mounting Style | - | - | SMD/SMT |
| Package Case | - | - | 6-TSSOP, SC-88, SOT-363 |
| Technology | - | - | Si |
| Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Number of Channels | - | - | 2 Channel |
| Supplier Device Package | - | - | SC-88/SC70-6/SOT-363 |
| Configuration | - | - | Dual |
| FET Type | - | - | 2 N-Channel (Dual) |
| Power Max | - | - | 250mW |
| Transistor Type | - | - | 2 N-Channel |
| Drain to Source Voltage Vdss | - | - | 60V |
| Input Capacitance Ciss Vds | - | - | 26pF @ 20V |
| FET Feature | - | - | Logic Level Gate |
| Current Continuous Drain Id 25°C | - | - | 295mA |
| Rds On Max Id Vgs | - | - | 1.6 Ohm @ 500mA, 10V |
| Vgs th Max Id | - | - | 2.5V @ 250μA |
| Gate Charge Qg Vgs | - | - | 0.9nC @ 4.5V |
| Pd Power Dissipation | - | - | 250 mW |
| Maximum Operating Temperature | - | - | + 150 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 32 ns |
| Rise Time | - | - | 34 ns |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 295 mA |
| Vds Drain Source Breakdown Voltage | - | - | 60 V |
| Rds On Drain Source Resistance | - | - | 1.6 Ohms |
| Transistor Polarity | - | - | N-Channel |
| Typical Turn Off Delay Time | - | - | 34 ns |
| Typical Turn On Delay Time | - | - | 22 ns |
| Channel Mode | - | - | Enhancement |