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SEMI

SEMIX302GAR12E4S vs SEMIX302GB126HDS vs SEMIX302GB126HS

 
PartNumberSEMIX302GAR12E4SSEMIX302GB126HDSSEMIX302GB126HS
Description
制造商 型号 描述 RFQ
SEMIX302GAR12E4S 全新原装
SEMIX302GB126HDS 全新原装
SEMIX302GB126HS 全新原装
SEMIX302GB128D IGBT 4 (Trench)
SEMIX302GB128DS 全新原装
SEMIX302GB12E4S 全新原装
SEMIX302GB12T4S 全新原装
SEMIX302KD16S SEMIX, Trench IGBT Module, 1600V, 300A
SEMIX302KH16S SEMIX, Trench IGBT Module, 1600V, 300A
SEMIX302KT16S SEMIX, Trench Rectifier Thyristor Module, 1600V, 300A
SEMIX303GB12E4 全新原装
SEMIX303GB12E4S IGBT MODULE, DUAL, 1.2KV, 466A, Transistor Polarity:Dual NPN, DC Collector Current:466A, Collector Emitter Saturation Voltage Vce(on):1.8V, Power Dissipation Pd:-, Collector Emitter Voltage V(br)
SEMIX303GB12V 全新原装
SEMIX303GB12VS 全新原装
SEMIX303GD12E4C 全新原装
SEMIX303GD12T4C 全新原装
SEMIX303GD12VC 全新原装
SEMIX341D16S RECTIFIER MODULE, 1.6KV, 340A, SEMIX 13S, No. of Phases:Three Phase, Repetitive Reverse Voltage Vrrm Max:1.6kV, Forward Current If(AV):340A, Bridge Rectifier Case Style:Module, Forward Voltage VF
SEMIX352GAL128DS 全新原装
SEMIX352GAR128DS 全新原装
SEMIX352GB128D 全新原装
SEMIX352GB128DS IGBT POWER MODULE, Transistor Polarity:N Channel, DC Collector Current:377A, Collector Emitter Saturation Voltage Vce(on):2.35V, Power Dissipation Pd:-, Collector Emitter Voltage V(br)ceo:1.15V,
SEMIX353GB126HDS IGBT, 1200 V, 250 A @ 25 DegC, 260 A @ 80 DegC, 1.7 V @ 25 degC
SEMIX353GB126V1 全新原装
SEMIX353GB126V3 全新原装
SEMIX353GB128DS 全新原装
SEMIX353GB176HDS 全新原装
SEMIX353GD126HDC SEMIX, Trench IGBT Module, 1200V, 300A
SEMIX353GD126HDS 全新原装
SEMIX402GA066HDS 全新原装
SEMIX402GAL066HDS SEMIX, Trench IGBT Module, 600V, 400A
SEMIX402GB066HDS IGBT MODULE, DUAL, 600V, 530A, Transistor Polarity:Dual NPN, DC Collector Current:530A, Collector Emitter Saturation Voltage Vce(on):1.45V, Power Dissipation Pd:45W, Collector Emitter Voltage V(b
SEMIX403GB128D 全新原装
SEMIX404GB12E4S SEMIX, Trench IGBT Module, 1200V, 400A
SEMIX452GAR12 全新原装
SEMIX452GB126HD 全新原装
SEMIX453GB12E4 全新原装
SEMIX453GB12E4P 全新原装
SEMIX453GB12E4S IGBT, MODULE, 1.2KV, 683A, SEMIX 3S, Transistor Polarity:Dual N Channel, DC Collector Current:683A, Collector Emitter Saturation Voltage Vce(on):1.8V, Power Dissipation Pd:-, Collector Emitter Vo
SEMIX453GB12T4S Insulated Gate Bipolar Transistor, 685A I(C), 1200V V(BR)CES, N-Channel
SEMIX453GB12VS 全新原装
SEMIX453GB176HDS IGBT MODULE, 1.7KV, 444A, SEMIX 3S, Transistor Polarity:N Channel, DC Collector Current:444A, Collector Emitter Saturation Voltage Vce(on):1.7kV, Power Dissipation Pd:-, Collector Emitter Voltage
SEMIX453GD12VC 全新原装
SEMIX501D17FS SEMIX, Trench IGBT Module, 1700V, 800A
SEMIX503GB126HDS IGBT, 1200 V, 490 A @ 25 DegC, 480 A @ 80 DegC, 1.7 V @ 25 degC
SEMIX503GB126V3 全新原装
SEMIX553GB128DS 全新原装
SEMIX603GAR066HDS SEMIX, Trench IGBT Module, 600V, 800A
SEMIX402GB066HD 全新原装
SEMIX553GB128D 全新原装
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