SEMIX35

SEMIX352GAL128DS vs SEMIX352GAR128DS vs SEMIX352GB128D

 
PartNumberSEMIX352GAL128DSSEMIX352GAR128DSSEMIX352GB128D
Description
制造商 型号 描述 RFQ
SEMIX352GAL128DS 全新原装
SEMIX352GAR128DS 全新原装
SEMIX352GB128D 全新原装
SEMIX352GB128DS IGBT POWER MODULE, Transistor Polarity:N Channel, DC Collector Current:377A, Collector Emitter Saturation Voltage Vce(on):2.35V, Power Dissipation Pd:-, Collector Emitter Voltage V(br)ceo:1.15V,
SEMIX353GB126HDS IGBT, 1200 V, 250 A @ 25 DegC, 260 A @ 80 DegC, 1.7 V @ 25 degC
SEMIX353GB126V1 全新原装
SEMIX353GB126V3 全新原装
SEMIX353GB128DS 全新原装
SEMIX353GB176HDS 全新原装
SEMIX353GD126HDC SEMIX, Trench IGBT Module, 1200V, 300A
SEMIX353GD126HDS 全新原装
Top