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| PartNumber | SI2302CDS-T1-E3 | SI2302CDS-T1-GE3 | SI2302CDS-T1 |
| Description | MOSFET 20V Vds 8V Vgs SOT-23 | MOSFET 20V Vds 8V Vgs SOT-23 | |
| Manufacturer | Vishay | Vishay | VISHAY |
| Product Category | MOSFET | MOSFET | FETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SOT-23-3 | SOT-23-3 | - |
| Tradename | TrenchFET | TrenchFET | - |
| Packaging | Reel | Reel | Digi-ReelR Alternate Packaging |
| Height | 1.45 mm | 1.45 mm | - |
| Length | 2.9 mm | 2.9 mm | - |
| Series | SI2 | SI2 | TrenchFETR |
| Width | 1.6 mm | 1.6 mm | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Part # Aliases | SI2302CDS-E3 | SI2302CDS-GE3 | - |
| Unit Weight | 0.000282 oz | 0.000282 oz | 0.050717 oz |
| Number of Channels | - | 1 Channel | 1 Channel |
| Transistor Polarity | - | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 2.9 A | - |
| Rds On Drain Source Resistance | - | 57 mOhms | - |
| Vgs th Gate Source Threshold Voltage | - | 400 mV | - |
| Vgs Gate Source Voltage | - | 4.5 V | - |
| Qg Gate Charge | - | 5.5 nC | - |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Maximum Operating Temperature | - | + 150 C | + 150 C |
| Pd Power Dissipation | - | 860 mW | - |
| Configuration | - | Single | Single |
| Channel Mode | - | Enhancement | Enhancement |
| Transistor Type | - | 1 N-Channel | 1 N-Channel |
| Forward Transconductance Min | - | 13 S | - |
| Fall Time | - | 7 ns | 7 ns |
| Rise Time | - | 7 ns | 7 ns |
| Typical Turn Off Delay Time | - | 30 ns | 30 ns |
| Typical Turn On Delay Time | - | 8 ns | 8 ns |
| Part Aliases | - | - | SI2302CDS-E3 |
| Package Case | - | - | TO-236-3, SC-59, SOT-23-3 |
| Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | SOT-23-3 (TO-236) |
| FET Type | - | - | MOSFET N-Channel, Metal Oxide |
| Power Max | - | - | 710mW |
| Drain to Source Voltage Vdss | - | - | 20V |
| Input Capacitance Ciss Vds | - | - | - |
| FET Feature | - | - | Standard |
| Current Continuous Drain Id 25°C | - | - | 2.6A (Ta) |
| Rds On Max Id Vgs | - | - | 57 mOhm @ 3.6A, 4.5V |
| Vgs th Max Id | - | - | 850mV @ 250μA |
| Gate Charge Qg Vgs | - | - | 5.5nC @ 4.5V |
| Pd Power Dissipation | - | - | 710 mW |
| Vgs Gate Source Voltage | - | - | 8 V |
| Id Continuous Drain Current | - | - | 2.6 A |
| Vds Drain Source Breakdown Voltage | - | - | 20 V |
| Rds On Drain Source Resistance | - | - | 57 mOhms |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI2302CDS-T1-E3 | MOSFET 20V Vds 8V Vgs SOT-23 | |
| SI2302CDS-T1-GE3 | MOSFET 20V Vds 8V Vgs SOT-23 | ||
| SI2302CDS-T1 | 全新原装 | ||
| SI2302CDS-T1-GE3-CUT TAPE | 全新原装 | ||
Vishay |
SI2302CDS-T1-E3 | Trans MOSFET N-CH 20V 2.6A 3-Pin SOT-23 T/R | |
| SI2302CDS-T1-GE3 | MOSFET N-CH 20V 2.6A SOT23-3 |