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| PartNumber | SIA430DJ-T1-GE3-CUT TAPE | SIA430DJ-T1-GE3 | SIA430DJ-T1-GE3-CUTTAPE |
| Description | MOSFET N-CH 20V 12A SC70-6 | ||
| Manufacturer | - | Vishay Siliconix | - |
| Product Category | - | FETs - Single | - |
| Series | - | TrenchFETR | - |
| Packaging | - | Digi-ReelR Alternate Packaging | - |
| Part Aliases | - | SIA430DJ-GE3 | - |
| Mounting Style | - | SMD/SMT | - |
| Package Case | - | PowerPAKR SC-70-6 | - |
| Technology | - | Si | - |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Number of Channels | - | 1 Channel | - |
| Supplier Device Package | - | PowerPAKR SC-70-6 Single | - |
| Configuration | - | Single Quad Drain Dual Source | - |
| FET Type | - | MOSFET N-Channel, Metal Oxide | - |
| Power Max | - | 19.2W | - |
| Transistor Type | - | 1 N-Channel | - |
| Drain to Source Voltage Vdss | - | 20V | - |
| Input Capacitance Ciss Vds | - | 800pF @ 10V | - |
| FET Feature | - | Standard | - |
| Current Continuous Drain Id 25°C | - | 12A (Tc) | - |
| Rds On Max Id Vgs | - | 13.5 mOhm @ 7A, 10V | - |
| Vgs th Max Id | - | 3V @ 250μA | - |
| Gate Charge Qg Vgs | - | 18nC @ 10V | - |
| Pd Power Dissipation | - | 3.5 W | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Fall Time | - | 10 ns 8 ns | - |
| Rise Time | - | 10 ns 8 ns | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 12 A | - |
| Vds Drain Source Breakdown Voltage | - | 20 V | - |
| Rds On Drain Source Resistance | - | 13.5 mOhms | - |
| Transistor Polarity | - | N-Channel | - |
| Typical Turn Off Delay Time | - | 15 ns 17 ns | - |
| Typical Turn On Delay Time | - | 16 ns 10 ns | - |
| Channel Mode | - | Enhancement | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
| SIA430DJ-T1-GE3-CUT TAPE | 全新原装 | ||
| SIA430DJ-T1-GE3-CUTTAPE | 全新原装 | ||
Vishay |
SIA430DJ-T1-GE3 | MOSFET N-CH 20V 12A SC70-6 | |
| SIA430DJ-T4-GE3 | MOSFET N-CH 20V SC-70-6 |