 |  | | |
| PartNumber | SIA431DJ-T1 | SIA431DJ-T1-GE3 | SIA431DJ-TI-GE3 |
| Description | MOSFET P-CH 20V 12A PPAK SC70-6 | ||
| Manufacturer | VISHAY | VISHAY | - |
| Product Category | FETs - Single | FETs - Single | - |
| Series | SIA4xxDJ | SIA4xxDJ | - |
| Packaging | Reel | Reel | - |
| Part Aliases | SIA431DJ-GE3 | SIA431DJ-GE3 | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package Case | PowerPAK-SC-70-6 | PowerPAK-SC-70-6 | - |
| Technology | Si | Si | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Configuration | Single | Single | - |
| Transistor Type | 1 P-Channel | 1 P-Channel | - |
| Pd Power Dissipation | 19 W | 19 W | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Fall Time | 25 ns | 25 ns | - |
| Rise Time | 25 ns | 25 ns | - |
| Vgs Gate Source Voltage | +/- 8 V | +/- 8 V | - |
| Id Continuous Drain Current | - 12 A | - 12 A | - |
| Vds Drain Source Breakdown Voltage | - 20 V | - 20 V | - |
| Vgs th Gate Source Threshold Voltage | - 0.85 V | - 0.85 V | - |
| Rds On Drain Source Resistance | 70 mOhms | 70 mOhms | - |
| Transistor Polarity | P-Channel | P-Channel | - |
| Typical Turn Off Delay Time | 65 ns | 65 ns | - |
| Typical Turn On Delay Time | 22 ns | 22 ns | - |
| Qg Gate Charge | 60 nC | 60 nC | - |
| Forward Transconductance Min | 31 S | 31 S | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
| SIA431DJ-T1 | 全新原装 | ||
| SIA431DJ-TI-GE3 | 全新原装 | ||
Vishay |
SIA431DJ-T1-GE3 | MOSFET P-CH 20V 12A PPAK SC70-6 |