SIHFB1

SIHFB11N50A-E3 vs SIHFB16N50K-E3 vs SIHFB18N50K-E3

 
PartNumberSIHFB11N50A-E3SIHFB16N50K-E3SIHFB18N50K-E3
DescriptionMOSFET RECOMMENDED ALT 781-SIHP12N50C-E3
ManufacturerVishay--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage500 V--
Id Continuous Drain Current11 A--
Rds On Drain Source Resistance520 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage30 V--
Qg Gate Charge52 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation170 W--
ConfigurationSingle--
Channel ModeEnhancement--
Height15.49 mm--
Length10.41 mm--
SeriesSIHF--
Width4.7 mm--
BrandVishay / Siliconix--
Product TypeMOSFET--
Factory Pack Quantity1--
SubcategoryMOSFETs--
制造商 型号 描述 RFQ
Vishay / Siliconix
Vishay / Siliconix
SIHFB11N50A-E3 MOSFET RECOMMENDED ALT 781-SIHP12N50C-E3
Vishay
Vishay
SIHFB11N50A-E3 MOSFET N-CH 500V 11A TO220AB
SIHFB16N50K-E3 全新原装
SIHFB18N50K-E3 全新原装
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