 |  | | |
| PartNumber | SIHH068N60E-T1-GE3 | SIHH040404-65NL-R32 | SIHH0605-R10M |
| Description | MOSFET 600V Vds 30V Vgs PowerPAK 8 x 8 | ||
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | PowerPAK-8x8-4 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Id Continuous Drain Current | 34 A | - | - |
| Rds On Drain Source Resistance | 68 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 3 V | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Qg Gate Charge | 80 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 202 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Series | E | - | - |
| Transistor Type | 1 N-Channel E-Series Power MOSFET | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 9.3 S | - | - |
| Fall Time | 30 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 148 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 60 ns | - | - |
| Typical Turn On Delay Time | 56 ns | - | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIHH068N60E-T1-GE3 | MOSFET 600V Vds 30V Vgs PowerPAK 8 x 8 | |
| SIHH040404-65NL-R32 | 全新原装 | ||
| SIHH0605-R10M | 全新原装 | ||
| SIHH070705-R10K-R26 | 全新原装 | ||
| SIHH070705-R10M-R26 | 全新原装 | ||
Vishay |
SIHH068N60E-T1-GE3 | E Series Power MOSFET |