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| PartNumber | SIHU7N60E-GE3 | SIHU7N60E-E3 |
| Description | MOSFET 600V Vds 30V Vgs IPAK (TO-251) | MOSFET 600V Vds 30V Vgs IPAK (TO-251) |
| Manufacturer | Vishay | Vishay |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | TO-251-3 | TO-251-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 609 V | 609 V |
| Id Continuous Drain Current | 7 A | 7 A |
| Rds On Drain Source Resistance | 600 mOhms | 600 mOhms |
| Vgs th Gate Source Threshold Voltage | 4 V | 4 V |
| Vgs Gate Source Voltage | 30 V | 30 V |
| Qg Gate Charge | 20 nC | 20 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 78 W | 78 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Packaging | Tube | Tube |
| Series | E | E |
| Brand | Vishay / Siliconix | Vishay / Siliconix |
| Fall Time | 14 ns | 14 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 13 ns | 13 ns |
| Factory Pack Quantity | 75 | 75 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 24 ns | 24 ns |
| Typical Turn On Delay Time | 13 ns | 13 ns |
| Unit Weight | 0.011640 oz | 0.011640 oz |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIHU7N60E-GE3 | MOSFET 600V Vds 30V Vgs IPAK (TO-251) | |
| SIHU7N60E-E3 | MOSFET 600V Vds 30V Vgs IPAK (TO-251) | ||
Vishay |
SIHU7N60E-E3 | RF Bipolar Transistors MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS | |
| SIHU7N60E-GE3 | MOSFET N-CH 600V 7A TO-251 | ||
| SIHU7N60E | 全新原装 |