SQJ401EP

SQJ401EP-T1_GE3 vs SQJ401EP-T2_GE3 vs SQJ401EP-T1-GE3

 
PartNumberSQJ401EP-T1_GE3SQJ401EP-T2_GE3SQJ401EP-T1-GE3
DescriptionMOSFET P-Channel 12V AEC-Q101 QualifiedMOSFET RECOMMENDED ALT 78-SQJ411EP-T1_GE3RF Bipolar Transistors MOSFET P-Channel 12V Automotive MOSFET
ManufacturerVishayVishayVISHAY
Product CategoryMOSFETMOSFETIC Chips
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePowerPAK-SO-8L-4SO-8L-4-
Number of Channels1 Channel1 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage12 V12 V-
Id Continuous Drain Current32 A32 A-
Rds On Drain Source Resistance5 mOhms6 mOhms-
Vgs th Gate Source Threshold Voltage1.5 V600 mV-
Vgs Gate Source Voltage8 V8 V-
Qg Gate Charge164 nC109 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation83 W83 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
QualificationAEC-Q101AEC-Q101-
TradenameTrenchFETTrenchFET-
PackagingReelReel-
Height1.04 mm--
Length6.15 mm--
SeriesSQSQ-
Transistor Type1 P-Channel--
Width5.13 mm--
BrandVishay / SiliconixVishay / Siliconix-
Forward Transconductance Min60 S--
Fall Time166 ns--
Product TypeMOSFETMOSFET-
Rise Time63 ns--
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time263 ns--
Typical Turn On Delay Time43 ns--
Unit Weight0.017870 oz--
制造商 型号 描述 RFQ
Vishay / Siliconix
Vishay / Siliconix
SQJ401EP-T1_GE3 MOSFET P-Channel 12V AEC-Q101 Qualified
SQJ401EP-T2_GE3 MOSFET RECOMMENDED ALT 78-SQJ411EP-T1_GE3
SQJ401EP-T1-GE3 RF Bipolar Transistors MOSFET P-Channel 12V Automotive MOSFET
Vishay
Vishay
SQJ401EP-T1_GE3 MOSFET P-CH 12V 32A POWERPAKSO-8
SQJ401EP-T1 全新原装
SQJ401EPT1GE3 Power Field-Effect Transistor, 32A I(D), 12V, 0.008ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
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