 | | | |
| PartNumber | STD11N65M2 | STD11N65M5 | STD11N60M2-EP |
| Description | MOSFET N-channel 650 V, 0.6 Ohm typ., 7 A MDmesh M2 Power MOSFET in DPAK package | MOSFET N-Ch 650V 0.43 Ohm 9A MDmesh M5 MOS | MOSFET N-channel 600 V, 0.550 Ohm typ., 7.5 A MDmesh M2 EP Power MOSFET in a DPAK package |
| Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 | TO-252-3 |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 650 V | 650 V | 600 V |
| Id Continuous Drain Current | 7 A | 9 A | 7.5 A |
| Rds On Drain Source Resistance | 670 mOhms | 480 mOhms | 550 mOhms |
| Vgs th Gate Source Threshold Voltage | 3 V | - | 2 V |
| Vgs Gate Source Voltage | 25 V | - | 25 V |
| Qg Gate Charge | 12.5 nC | - | 12.4 nC |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Pd Power Dissipation | 85 W | 85 W | 85 W |
| Tradename | MDmesh II Plus | MDmesh | MDmesh |
| Packaging | Reel | Reel | Reel |
| Product | Power MOSFET | - | - |
| Series | STD11N65M2 | STD11N65M5 | STD11N60M2-EP |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Fall Time | 15 ns | - | 8 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 7.5 ns | - | 5.5 ns |
| Factory Pack Quantity | 2500 | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 26 ns | - | 26 ns |
| Typical Turn On Delay Time | 9.5 ns | - | 9 ns |
| Unit Weight | 0.139332 oz | 0.139332 oz | 0.011993 oz |
| Number of Channels | - | - | 1 Channel |
| Configuration | - | - | Single |
| Channel Mode | - | - | Enhancement |
| Transistor Type | - | - | 1 N-Channel |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
STMicroelectronics |
STD120N4F6 | MOSFET N-Ch 40V 4mOhm 80A STripFET VI DeepGATE | |
| STD11N65M2 | MOSFET N-channel 650 V, 0.6 Ohm typ., 7 A MDmesh M2 Power MOSFET in DPAK package | ||
| STD11N65M5 | MOSFET N-Ch 650V 0.43 Ohm 9A MDmesh M5 MOS | ||
| STD11NM60ND | MOSFET N-channel 600V, 10A FDMesh II | ||
| STD11NM65N | MOSFET N-Ch 650V 0.425Ohm 11A pwr MDMesh II | ||
| STD11NM50N | MOSFET POWER MOSFET N-CH 500V | ||
| STD120N4LF6 | MOSFET N-Ch 40V 3.1 mOhm 80A STripFET VI Deep | ||
| STD127DT4 | Bipolar Transistors - BJT High VTG fast switch NPN pwr transistor | ||
| STD11N60M2-EP | MOSFET N-channel 600 V, 0.550 Ohm typ., 7.5 A MDmesh M2 EP Power MOSFET in a DPAK package | ||
| STD127DT4 | Bipolar Transistors - BJT High VTG fast switch NPN pwr transisto | ||
| STD11NM50N | MOSFET N-CH 500V 9A DPAK | ||
| STD11NM65N | RF Bipolar Transistors MOSFET N-Ch 650V 0.425Ohm 11A pwr MDMesh II | ||
| STD11N60M2-EP | N-CHANNEL 600 V, 0.550 OHM TYP., | ||
| STD11N65M2 | MOSFET N-CH 650V 7A DPAK | ||
| STD11N65M5 | MOSFET N CH 650V 9A DPAK | ||
| STD11NM60N | MOSFET N-CH 600V 10A DPAK | ||
| STD11NM60N-1 | MOSFET N-CH 600V 10A I-PAK | ||
| STD11NM60ND | MOSFET N-CH 600V 10A DPAK | ||
| STD120N4F6 | MOSFET N-CH 40V 80A DPAK | ||
| STD120N4LF6 | MOSFET N-CH 40V 80A DPAK | ||
| STD11N65M5-CUT TAPE | 全新原装 | ||
| STD120N4LF6-CUT TAPE | 全新原装 | ||
| STD11N65M5 11N65M5 | 全新原装 | ||
| STD11N65M5 11NM65 | 全新原装 | ||
| STD11N65M5(1297) | 全新原装 | ||
| STD11NE06LT4 | 全新原装 | ||
| STD11NM65M5 11N65 | 全新原装 | ||
| STD120F | 全新原装 | ||
| STD123 | 全新原装 | ||
| STD123-AT | 全新原装 | ||
| STD123AS | 全新原装 | ||
| STD123AS 12A | 全新原装 | ||
| STD123ASF | 全新原装 | ||
| STD123S , MA188- | 全新原装 | ||
| STD123UF SOT323-123 | 全新原装 | ||
| STD12C7H | 全新原装 | ||
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| STD12N05T4 | MOSFET N-Ch 50 Volt 12 Amp | ||
| STD12100TR | DIODE SCHOTTKY 100V 12A DPAK | ||
| STD123 SJ | 全新原装 | ||
| STD123S PF | 全新原装 | ||
| STD123SG | 全新原装 | ||
| STD12N05L | 全新原装 | ||
| STD1235 | 全新原装 | ||
| STD123S | 全新原装 | ||
| STD123SF | 全新原装 | ||
| STD123SJ | 全新原装 | ||
| STD123UF | 全新原装 |