STD12

STD120N4F6 vs STD120N4LF6 vs STD127DT4

 
PartNumberSTD120N4F6STD120N4LF6STD127DT4
DescriptionMOSFET N-Ch 40V 4mOhm 80A STripFET VI DeepGATEMOSFET N-Ch 40V 3.1 mOhm 80A STripFET VI DeepBipolar Transistors - BJT High VTG fast switch NPN pwr transistor
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product CategoryMOSFETMOSFETBipolar Transistors - BJT
RoHSYYY
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-252-3TO-252-3DPAK-3
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-ChannelNPN
Vds Drain Source Breakdown Voltage40 V40 V-
Id Continuous Drain Current80 A80 A-
Rds On Drain Source Resistance4 mOhms3.6 mOhms-
Vgs th Gate Source Threshold Voltage4 V3 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge65 nC80 nC-
Minimum Operating Temperature- 55 C- 55 C- 65 C
Maximum Operating Temperature+ 175 C+ 150 C+ 150 C
Pd Power Dissipation110 W110 W35 W
ConfigurationSingleSingleSingle
QualificationAEC-Q101AEC-Q101-
TradenameSTripFETSTripFET-
PackagingReelReelReel
SeriesSTD120N4F6STD120N4LF6STD127DT4
Transistor Type1 N-Channel1 N-Channel-
BrandSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product TypeMOSFETMOSFETBJTs - Bipolar Transistors
Factory Pack Quantity250025002500
SubcategoryMOSFETsMOSFETsTransistors
Unit Weight0.139332 oz0.139332 oz0.012346 oz
Collector Emitter Voltage VCEO Max--400 V
Emitter Base Voltage VEBO--18 V
Collector Emitter Saturation Voltage--1.3 V
Maximum DC Collector Current--4 A
DC Current Gain hFE Max--40
Continuous Collector Current--4 A
DC Collector/Base Gain hfe Min--5
制造商 型号 描述 RFQ
STMicroelectronics
STMicroelectronics
STD12N50DM2 MOSFET N-channel 500 V, 0.299 Ohm typ., 11 A MDmesh DM2 Power MOSFET in a DPAK package
STD12N60M2 MOSFET N-channel 600 V, 0.395 Ohm typ., 9 A MDmesh M2 Power MOSFET in DPAK package
STD120N4F6 MOSFET N-Ch 40V 4mOhm 80A STripFET VI DeepGATE
STD12N65M2 MOSFET N-channel 650 V, 0.42 Ohm typ., 8 A MDmesh M2 Power MOSFET in a DPAK package
STD12N60DM2AG MOSFET
STD12N50M2 MOSFET N-channel 500 V, 0.325 Ohm typ., 10 A MDmesh M2 Power MOSFET in a DPAK package
STD120N4LF6 MOSFET N-Ch 40V 3.1 mOhm 80A STripFET VI Deep
STD127DT4 Bipolar Transistors - BJT High VTG fast switch NPN pwr transistor
STD12N65M5 MOSFET POWER MOSFET N-CH 650V
STD127DT4 Bipolar Transistors - BJT High VTG fast switch NPN pwr transisto
STD12N65M2 RF Bipolar Transistors MOSFET N-channel 650 V, 0.42 Ohm typ., 8 A MDmesh M2 Power MOSFET in a DPAK package
STD12N50DM2 N-CHANNEL 500 V, 0.35 OHM TYP.,
STD120N4F6 MOSFET N-CH 40V 80A DPAK
STD120N4LF6 MOSFET N-CH 40V 80A DPAK
STD12N50M2 MOSFET N-CH 500V 10A DPAK
STD12N60M2 MOSFET N-CHANNEL 600V 9A DPAK
STD12N65M5 MOSFET N-CH 650V 8.5A DPAK
ON Semiconductor
ON Semiconductor
STD12N10T4G Switching Controllers NFET DPAK SPCL 100V
STD12N10T4G MOSFET N-CH SPCL 100V DPAK
STD120N4LF6-CUT TAPE 全新原装
STD12100TR DIODE SCHOTTKY 100V 12A DPAK
STD12N60M2-CUT TAPE 全新原装
STD12N50M2 12N50M2 全新原装
STD120F 全新原装
STD123 全新原装
STD123 SJ 全新原装
STD123-AT 全新原装
STD1235 全新原装
STD123AS 全新原装
STD123AS 12A 全新原装
STD123ASF 全新原装
STD123S 全新原装
STD123S , MA188- 全新原装
STD123S PF 全新原装
STD123SF 全新原装
STD123SG 全新原装
STD123SJ 全新原装
STD123UF 全新原装
STD123UF SOT323-123 全新原装
STD12C7H 全新原装
STD12FN06L 全新原装
STD12L01 全新原装
STD12N05 12 A, 50 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
STD12N05L 全新原装
STD12N05T4 MOSFET N-Ch 50 Volt 12 Amp
STD12N06 MOSFET TO-251 N-CH 60V 12A
STD12N06L MOSFET TO-251 N-CH 60V 12A
STD12N06LT4 全新原装
STD12N06T4 全新原装
STD12N10L 全新原装
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