STD120N

STD120N4F6 vs STD120N4LF6

 
PartNumberSTD120N4F6STD120N4LF6
DescriptionMOSFET N-Ch 40V 4mOhm 80A STripFET VI DeepGATEMOSFET N-Ch 40V 3.1 mOhm 80A STripFET VI Deep
ManufacturerSTMicroelectronicsSTMicroelectronics
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CaseTO-252-3TO-252-3
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage40 V40 V
Id Continuous Drain Current80 A80 A
Rds On Drain Source Resistance4 mOhms3.6 mOhms
Vgs th Gate Source Threshold Voltage4 V3 V
Vgs Gate Source Voltage20 V20 V
Qg Gate Charge65 nC80 nC
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 150 C
Pd Power Dissipation110 W110 W
ConfigurationSingleSingle
QualificationAEC-Q101AEC-Q101
TradenameSTripFETSTripFET
PackagingReelReel
SeriesSTD120N4F6STD120N4LF6
Transistor Type1 N-Channel1 N-Channel
BrandSTMicroelectronicsSTMicroelectronics
Product TypeMOSFETMOSFET
Factory Pack Quantity25002500
SubcategoryMOSFETsMOSFETs
Unit Weight0.139332 oz0.139332 oz
制造商 型号 描述 RFQ
STMicroelectronics
STMicroelectronics
STD120N4F6 MOSFET N-Ch 40V 4mOhm 80A STripFET VI DeepGATE
STD120N4LF6 MOSFET N-Ch 40V 3.1 mOhm 80A STripFET VI Deep
STD120N4F6 MOSFET N-CH 40V 80A DPAK
STD120N4LF6 MOSFET N-CH 40V 80A DPAK
STD120N4LF6-CUT TAPE 全新原装
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