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| PartNumber | STGWT40H65DFB | STGWT40H65FB |
| Description | IGBT Transistors 650V 40A HSpd trench gate field-stop IGBT | IGBT Transistors 650V 40A HSpd trench gate field-stop IGBT |
| Manufacturer | STMicroelectronics | STMicroelectronics |
| Product Category | IGBT Transistors | IGBT Transistors |
| RoHS | Y | Y |
| Technology | Si | Si |
| Package / Case | TO-3P | TO-3P |
| Mounting Style | Through Hole | Through Hole |
| Configuration | Single | Single |
| Collector Emitter Voltage VCEO Max | 650 V | 650 V |
| Collector Emitter Saturation Voltage | 1.6 V | 1.6 V |
| Maximum Gate Emitter Voltage | 20 V | 20 V |
| Continuous Collector Current at 25 C | 80 A | 80 A |
| Pd Power Dissipation | 283 W | 283 W |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C |
| Series | STGWT40H65DFB | STGWT40H65FB |
| Packaging | Tube | Tube |
| Continuous Collector Current Ic Max | 40 A | 40 A |
| Brand | STMicroelectronics | STMicroelectronics |
| Gate Emitter Leakage Current | 250 nA | 250 nA |
| Product Type | IGBT Transistors | IGBT Transistors |
| Factory Pack Quantity | 300 | 300 |
| Subcategory | IGBTs | IGBTs |
| Unit Weight | 0.238311 oz | 0.238311 oz |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
STMicroelectronics |
STGWT40H65DFB | IGBT Transistors 650V 40A HSpd trench gate field-stop IGBT | |
| STGWT40H65FB | IGBT Transistors 650V 40A HSpd trench gate field-stop IGBT | ||
| STGWT40H65DFB | IGBT 650V 80A 283W TO3P-3L | ||
| STGWT40H65FB | IGBT Transistors 650V 40A HSpd trench gate field-stop IGBT | ||
| STGWT40H65FB,GWT40H65FB, | 全新原装 |