STGWT40H65DFB

Mfr. #:: STGWT40H65DFB
制造商:: STMicroelectronics
描述:: IGBT 650V 80A 283W TO3P-3L
生命周期:: 制造商新产品。
数据表:: STGWT40H65DFB 数据表
交货:: DHL FedEx Ups TNT EMS
支付:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:: STGWT40H65DFB 更多信息 STGWT40H65DFB Product Details

产品属性
属性值

制造商: 英石

产品分类: IGBT - 单

系列: 600-650V IGBTs

打包: 管子

单位重量: 0.238311 oz

安装方式: 通孔

包装盒: TO-3P-3, SC-65-3

输入类型: 标准

安装型: 通孔

供应商-设备-包: TO-3P

配置: 单身的

最大功率: 283W

反向恢复时间trr: 62ns

电流收集器 Ic-Max: 80A

电压收集器发射极击穿最大值: 650V

IGBT型: 海沟场停止

电流收集器脉冲Icm: 160A

Vce-on-Max-Vge-Ic: 2V @ 15V, 40A

开关能源: 498μJ (on), 363μJ (off)

栅极电荷: 210nC

Td-on-off-25°C: 40ns/142ns

测试条件: 400V, 40A, 5 Ohm, 15V

钯功耗: 283 W

最高工作温度: + 175 C

最低工作温度: - 55 C

集电极-发射极-电压-VCEO-Max: 650 V

集电极-发射极-饱和-电压: 1.6 V

25-C 时的连续集电极电流: 80 A

栅极-发射极-漏电流: 250 nA

最大栅极发射极电压: +/- 20 V

连续集电极电流 Ic-Max: 40 A

Tags: STGWT40H65, STGWT40H6, STGWT40H, STGWT4, STGWT, STGW, STG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

STGWT40H65DFB 描述

***Components: STMicroelectronics STGWT40H65DFB IGBT, 80 A 650 V, 3-Pin TO-3P

***p One Stop Global: Trans IGBT Chip N-CH 650V 80A 283000mW 3-Pin(3+Tab) TO-3P Tube

***ure Electronics: STGWT40 Series 650 V 80 A Through Hole Silicon IGBT - TO-3P

***p One Stop Japan: Trans IGBT Chip N-CH 650V 80A 3-Pin(3+Tab) TO-3P Tube

***et Europe: Trans IGBT Chip N-CH 650V 80A 3-Pin TO-3P Tube

***ied Electronics & Automation: IGBT Trench HB Series 650V 40A TO-3P

***i-Key: IGBT 650V 80A 283W TO3P-3L

***ark: Ptd High Voltage

STGWT40H65DFB 更多信息

IGBT HB/HB2 Series: STMicroelectronics IGBT HB/HB2 Series IGBTs combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary trench gate field-stop (TGFS) structure.

Market price

型号	制造商	描述	库存	价格
STGWT40H65DFB DISTI # V36:1790_06560827	STMicroelectronics	Trans IGBT Chip N-CH 650V 80A 3-Pin(3+Tab) TO-3P Tube RoHS: Compliant	0
STGWT40H65DFB DISTI # 497-14229-5-ND	STMicroelectronics	IGBT 650V 80A 283W TO3P-3L RoHS: Compliant Min Qty: 1 Container: Tube	396In Stock	2520:$2.1420 510:$2.6668 120:$3.1327 30:$3.6147 10:$3.8230 1:$4.2600
STGWT40H65DFB DISTI # STGWT40H65DFB	STMicroelectronics	Trans IGBT Chip N-CH 650V 80A 3-Pin TO-3P Tube (Alt: STGWT40H65DFB) RoHS: Compliant Min Qty: 30 Container: Tube	Europe - 0	300:€1.7900 180:€1.8900 120:€1.9900 60:€2.0900 30:€2.1900
STGWT40H65DFB DISTI # STGWT40H65DFB	STMicroelectronics	Trans IGBT Chip N-CH 650V 80A 3-Pin TO-3P Tube - Rail/Tube (Alt: STGWT40H65DFB) RoHS: Compliant Min Qty: 600 Container: Tube	Americas - 0	3000:$1.8900 6000:$1.8900 1800:$1.9900 1200:$2.0900 600:$2.1900
STGWT40H65DFB DISTI # STGWT40H65DFB	STMicroelectronics	Trans IGBT Chip N-CH 650V 80A 3-Pin TO-3P Tube (Alt: STGWT40H65DFB) RoHS: Compliant Min Qty: 600 Container: Tube	Asia - 0	30000:$1.4868 15000:$1.5270 6000:$1.5694 3000:$1.6377 1800:$1.7121 1200:$1.7937 600:$1.8833
STGWT40H65DFB DISTI # 40X8766	STMicroelectronics	PTD HIGH VOLTAGE	0	500:$1.9900 250:$2.0500 100:$2.4500 50:$2.8300 25:$3.0200 10:$3.4500 1:$3.9800
STGWT40H65DFB DISTI # 511-STGWT40H65DFB	STMicroelectronics	IGBT Transistors 650V 40A HSpd trench gate field-stop IGBT RoHS: Compliant	311	1:$4.0500 10:$3.4400 100:$2.9800 250:$2.8300 500:$2.5400 1000:$2.1400 2500:$2.0300
STGWT40H65DFB DISTI # 8294506P	STMicroelectronics	IGBT TRENCH HB SERIES 650V 40A TO-3P, TU	74	10:£2.5000 5:£2.7100
STGWT40H65DFB	STMicroelectronics	Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel RoHS: Compliant	Europe - 720

相关产品

图片	型号	描述
	Mfr.#: STGWT40HP65FB OMO.#: OMO-STGWT40HP65FB	IGBT Transistors PTD HIGH VOLTAGE
	Mfr.#: STGWT40V60DF OMO.#: OMO-STGWT40V60DF	IGBT Transistors 600V 40A High Speed Trench Gate IGBT
	Mfr.#: STGWT40H60DLFB OMO.#: OMO-STGWT40H60DLFB	IGBT Transistors 600V 40A HSpd trench gate field-stop IGBT
	Mfr.#: STGWT40V60DF OMO.#: OMO-STGWT40V60DF-STMICROELECTRONICS	IGBT 600V 80A 283W TO3P-3
	Mfr.#: STGWT40H65DFB OMO.#: OMO-STGWT40H65DFB-STMICROELECTRONICS	IGBT 650V 80A 283W TO3P-3L
	Mfr.#: STGWT40H65FB OMO.#: OMO-STGWT40H65FB-STMICROELECTRONICS	IGBT Transistors 650V 40A HSpd trench gate field-stop IGBT
	Mfr.#: STGWT40V60DF-F OMO.#: OMO-STGWT40V60DF-F-1190	全新原装
	Mfr.#: STGWT40HP65FBHB OMO.#: OMO-STGWT40HP65FBHB-1190	全新原装
	Mfr.#: STGWT40H65FB,GWT40H65FB, OMO.#: OMO-STGWT40H65FB-GWT40H65FB--1190	全新原装
	Mfr.#: STGWT40HP65FB OMO.#: OMO-STGWT40HP65FB-STMICROELECTRONICS	TRENCH GATE FIELD-STOP IGBT, HB