STQ1NK60Z

STQ1NK60ZR-AP vs STQ1NK60Z vs STQ1NK60ZR

 
PartNumberSTQ1NK60ZR-APSTQ1NK60ZSTQ1NK60ZR
DescriptionMOSFET N-channel 600 V, 13 Ohm typ., 0.3 A Zener-protected SuperMESH(TM) Power MOSFET in TO-92 package
ManufacturerSTMicroelectronicsST/ST/
Product CategoryMOSFETFETs - SingleFETs - Single
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-92-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current300 mA--
Rds On Drain Source Resistance15 Ohms--
Vgs th Gate Source Threshold Voltage3 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge4.9 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation3 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameSuperMESH--
SeriesSTQ1NK60ZR--
Transistor Type1 N-Channel Power MOSFET--
BrandSTMicroelectronics--
Forward Transconductance Min0.5 S--
Fall Time28 ns--
Product TypeMOSFET--
Rise Time5 ns--
Factory Pack Quantity2000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time13 ns--
Typical Turn On Delay Time5.5 ns--
Unit Weight0.007760 oz--
制造商 型号 描述 RFQ
STMicroelectronics
STMicroelectronics
STQ1NK60ZR-AP MOSFET N-channel 600 V, 13 Ohm typ., 0.3 A Zener-protected SuperMESH(TM) Power MOSFET in TO-92 package
STQ1NK60ZR-AP MOSFET N-CH 600V 0.3A TO-92
STQ1NK60Z 全新原装
STQ1NK60ZR 全新原装
STQ1NK60ZR-AP , MMBZ5251 全新原装
STQ1NK60ZR-AP,STQ1NK60ZR 全新原装
STQ1NK60ZR-APF1 全新原装
STQ1NK60ZR-APV3 全新原装
STQ1NK60ZRAP Power Field-Effect Transistor, 0.3A I(D), 600V, 15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
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