TC58NYG1S

TC58NYG1S3HBAI6 vs TC58NYG1S3HBAI4 vs TC58NYG1S3EBAI5

 
PartNumberTC58NYG1S3HBAI6TC58NYG1S3HBAI4TC58NYG1S3EBAI5
DescriptionNAND Flash 1.8V 2Gb 24nm SLC NAND (EEPROM)NAND Flash 1.8V 2Gb 24nm SLC NAND (EEPROM)NAND Flash 1.8V 2Gb 43nm SLC NAND (EEPROM)
ManufacturerToshibaToshibaToshiba
Product CategoryNAND FlashNAND FlashNAND Flash
RoHSYYY
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseVFBGA-67TFBGA-63TFBGA-63
Memory Size2 Gbit2 Gbit2 Gbit
Interface TypeParallelParallelParallel
Organization256 M x 8256 M x 8256 M x 8
Data Bus Width8 bit8 bit8 bit
Supply Voltage Min1.7 V1.7 V1.7 V
Supply Voltage Max1.95 V1.95 V1.95 V
Supply Current Max30 mA30 mA30 mA
Minimum Operating Temperature- 40 C- 40 C- 40 C
Maximum Operating Temperature+ 85 C+ 85 C+ 85 C
PackagingTrayTrayTray
Memory TypeNANDNANDNAND
BrandToshiba MemoryToshiba MemoryToshiba Memory
Maximum Clock Frequency---
Moisture SensitiveYesYesYes
Product TypeNAND FlashNAND FlashNAND Flash
Factory Pack Quantity338210180
SubcategoryMemory & Data StorageMemory & Data StorageMemory & Data Storage
Timing Type-SynchronousSynchronous
Product-NAND FlashNAND Flash
Speed-25 ns25 ns
Architecture-Block EraseBlock Erase
制造商 型号 描述 RFQ
Toshiba Memory
Toshiba Memory
TC58NYG1S3HBAI6 NAND Flash 1.8V 2Gb 24nm SLC NAND (EEPROM)
TC58NYG1S3HBAI4 NAND Flash 1.8V 2Gb 24nm SLC NAND (EEPROM)
TC58NYG1S3EBAI5 NAND Flash 1.8V 2Gb 43nm SLC NAND (EEPROM)
TC58NYG1S3HBAI6 EEPROM 1.8V, 2 Gbit CMOS NAND EEPROM
TC58NYG1S3HBAI4 Flash Memory 2Gb 1.8V SLC NAND Flash Serial EEPROM
TC58NYG1S3EBAI5 Flash Memory 2Gb 1.8V SLC NAND Flash Serial EEPROM
TC58NYG1S3HBAI4_TRAY 全新原装
TC58NYG1S8EBAI4 全新原装
TC58NYG1S8HBAI6 全新原装
TC58NYG1S8HBAI6/2GBIT 全新原装
TC58NYG1S8HBAI6JD2 全新原装
TC58NYG1S3HBAI4-ND 全新原装
TC58NYG1S3HBAI6-ND 全新原装
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