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| PartNumber | TK6A65D(STA4,Q,M) | TK6A80E,S4X | TK6A65W,S5X |
| Description | MOSFET N-Ch FET 650V 4.0s IDSS 10 uA .95 Ohm | MOSFET PLN MOS 800V 1700m (VGS=10V) TO-220SIS | MOSFET Power MOSFET N-Channel |
| Manufacturer | Toshiba | Toshiba | Toshiba |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220FP-3 | TO-220FP-3 | TO-220FP-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 650 V | 800 V | 650 V |
| Id Continuous Drain Current | 6 A | 6 A | 5.8 A |
| Rds On Drain Source Resistance | 1.11 Ohms | 1.35 Ohms | 850 mOhms |
| Configuration | Single | Single | Single |
| Height | 15 mm | 15 mm | 15 mm |
| Length | 10 mm | 10 mm | 10 mm |
| Series | TK6A65D | TK6A80E | TK6A65W |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 4.5 mm | 4.5 mm | 4.5 mm |
| Brand | Toshiba | Toshiba | Toshiba |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 50 | 50 | 50 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Unit Weight | 0.059966 oz | 0.211644 oz | 0.211644 oz |
| Vgs th Gate Source Threshold Voltage | - | 4 V | 2.5 V |
| Vgs Gate Source Voltage | - | 30 V | 30 V |
| Qg Gate Charge | - | 32 nC | 11 nC |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Maximum Operating Temperature | - | + 150 C | + 150 C |
| Pd Power Dissipation | - | 45 W | 30 W |
| Channel Mode | - | Enhancement | Enhancement |
| Fall Time | - | 15 ns | 4 ns |
| Rise Time | - | 20 ns | 14 ns |
| Typical Turn Off Delay Time | - | 85 ns | 45 ns |
| Typical Turn On Delay Time | - | 55 ns | 34 ns |
| Packaging | - | - | Tube |
