 |  | | |
| PartNumber | ZXMC3F31DN8TA | ZXMC3F31DN8 | ZXMC3F31DN8TC |
| Description | MOSFET 30V S08 Dual MOSFET 20V VBR 4.5V Gate | ||
| Manufacturer | Diodes Incorporated | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SO-8 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel, P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 7.3 A, 5.3 A | - | - |
| Rds On Drain Source Resistance | 24 mOhms, 80 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1 V, 3 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 12.9 nC, 12.7 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 1.25 W | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Series | ZXMC3 | - | - |
| Transistor Type | 1 N-Channel, 1 P-Channel | - | - |
| Brand | Diodes Incorporated | - | - |
| Forward Transconductance Min | 16.5 S, 14 S | - | - |
| Fall Time | 8 ns, 21 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 3.3 ns, 3 ns | - | - |
| Factory Pack Quantity | 500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 16 ns, 30 ns | - | - |
| Typical Turn On Delay Time | 2.9 ns, 1.9 ns | - | - |
| Unit Weight | 0.002610 oz | - | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Diodes Incorporated |
ZXMC3F31DN8TA | MOSFET 30V S08 Dual MOSFET 20V VBR 4.5V Gate | |
| ZXMC3F31DN8TA | Gate Drivers 30V S08 Dual MOSFET 20V VBR 4.5V Gate | ||
| ZXMC3F31DN8 | 全新原装 | ||
| ZXMC3F31DN8TC | 全新原装 | ||
| ZXMC3F31DX8 | 全新原装 |