STGW25H120DF2

Mfr. #:: STGW25H120DF2
制造商:: STMicroelectronics
描述:: IGBT Transistors IGBT & Power Bipola
生命周期:: 制造商新产品。
数据表:: STGW25H120DF2 数据表
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更多信息:: STGW25H120DF2 更多信息 STGW25H120DF2 Product Details

产品属性
属性值

制造商: 意法半导体

产品分类: IGBT - 单

系列: 900-1300V IGBTs

打包: 管子

单位重量: 1.340411 oz

安装方式: 通孔

包装盒: TO-247-3

输入类型: 标准

安装型: 通孔

供应商-设备-包: TO-247

配置: 单身的

最大功率: 375W

反向恢复时间trr: 303ns

电流收集器 Ic-Max: 50A

电压收集器发射极击穿最大值: 1200V

IGBT型: 海沟场停止

电流收集器脉冲Icm: 100A

Vce-on-Max-Vge-Ic: 2.6V @ 15V, 25A

开关能源: 600μJ (on), 700μJ (off)

栅极电荷: 100nC

Td-on-off-25°C: 29ns/130ns

测试条件: 600V, 25A, 10 Ohm, 15V

钯功耗: 375 W

最高工作温度: + 175 C

最低工作温度: - 55 C

集电极-发射极-电压-VCEO-Max: 1200 V

集电极-发射极-饱和-电压: 2.1 V

25-C 时的连续集电极电流: 50 A

栅极-发射极-漏电流: 250 nA

最大栅极发射极电压: 20 V

连续集电极电流 Ic-Max: 25 A

Tags: STGW25H, STGW25, STGW2, STGW, STG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

STGW25H120DF2 更多信息

IGBT H Series: STMicroelectronics 1200V H Series Trench Gate Field-Stop IGBTs represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. With ST's advanced Trench-Gate Field-Stop High-Speed technology, these IGBTs have a 5μs minimum short circuit withstand time at TJ=150°C, minimal collector current turn off tail, and very low saturation voltage (Vce(sat)) down to 2.1V (typical) to minimize energy losses during switching and when turned on. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Market price

型号	制造商	描述	库存	价格
STGW25H120DF2 DISTI # V36:1790_06560738	STMicroelectronics	Trans IGBT Chip N-CH 1.2KV 50A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	0
STGW25H120DF2 DISTI # 497-14714-5-ND	STMicroelectronics	IGBT H-SERIES 1200V 25A TO-247 RoHS: Compliant Min Qty: 1 Container: Tube	On Order	510:$5.3708 120:$6.1677 30:$7.1033 10:$7.4500 1:$8.2500
STGW25H120DF2 DISTI # STGW25H120DF2	STMicroelectronics	Trans IGBT Chip N-CH 1200V 50A 3-Pin TO-247 Tube (Alt: STGW25H120DF2) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 0	1000:€3.6900 500:€3.9900 100:€4.1900 50:€4.2900 25:€4.4900 10:€4.6900 1:€5.0900
STGW25H120DF2 DISTI # STGW25H120DF2	STMicroelectronics	Trans IGBT Chip N-CH 1200V 50A 3-Pin TO-247 Tube (Alt: STGW25H120DF2) RoHS: Compliant Min Qty: 600 Container: Tube	Asia - 0	30000:$2.4513 15000:$2.5176 6000:$2.5875 3000:$2.7000 1800:$2.8227 1200:$2.9571 600:$3.1050
STGW25H120DF2 DISTI # STGW25H120DF2	STMicroelectronics	Trans IGBT Chip N-CH 1200V 50A 3-Pin TO-247 Tube - Rail/Tube (Alt: STGW25H120DF2) RoHS: Compliant Min Qty: 600 Container: Tube	Americas - 0	6000:$4.1900 3000:$4.2900 1800:$4.4900 1200:$4.6900 600:$4.8900
STGW25H120DF2 DISTI # 26Y5814	STMicroelectronics	PTD HIGH VOLTAGE	0	500:$4.2900 250:$4.4300 100:$5.2800 50:$5.6800 25:$6.0800 10:$6.6700 1:$7.4300
STGW25H120DF2 DISTI # 511-STGW25H120DF2	STMicroelectronics	IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 25 A high speed RoHS: Compliant	0	1:$7.8500 10:$7.0900 25:$6.7600 100:$5.8700 250:$5.6100 500:$5.1100 1000:$4.4500
STGW25H120DF2 DISTI # IGBT1460	STMicroelectronics	IGBT 1200V 50A 2,1VTO247-3	Stock DE - 0Stock HK - 0Stock US - 0	600:$4.8200
STGW25H120DF2 DISTI # STGW25H120DF2	STMicroelectronics	1200V 50A 375W TO247 RoHS: Not Compliant	0	5:€5.2000 30:€4.6000 120:€4.3000 300:€4.1500

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