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STGW25M120DF3

STGW25M120DF3
Mfr. #:
STGW25M120DF3
制造商:
STMicroelectronics
描述:
IGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 25 A low loss
生命周期:
制造商新产品。
数据表:
STGW25M120DF3 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
更多信息:
STGW25M120DF3 更多信息 STGW25M120DF3 Product Details
产品属性
属性值
制造商：
意法半导体
产品分类：
IGBT晶体管
RoHS：
Y
技术：
硅
包装/案例：
TO-247-3
安装方式：
通孔
配置：
单身的
集电极-发射极电压 VCEO 最大值：
1200 V
集电极-发射极饱和电压：
1.85 V
最大栅极发射极电压：
20 V
25 C 时的连续集电极电流：
50 A
Pd - 功耗：
326 W
最低工作温度：
- 55 C
最高工作温度：
+ 175 C
系列：
STGW25M120DF3
打包：
管子
品牌：
意法半导体
栅极-发射极漏电流：
250 nA
产品类别：
IGBT晶体管
出厂包装数量：
600
子类别：
IGBT
单位重量：
1.340411 oz
Tags
STGW25, STGW2, STGW, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
Trench gate field-stop IGBT, M series 1200 V, 25 A low loss
***ical
Trans IGBT Chip N-CH 1200V 50A 375000mW 3-Pin(3+Tab) TO-247 Tube
***nell
IGBT, SINGLE, 1.2KV, 50A, TO-247-3; DC Collector Current: 50A; Collector Emitter Saturation Voltage Vce(on): 1.85V; Power Dissipation Pd: 375W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of
***icroelectronics
Trench gate field-stop IGBT, M series 1200 V, 25 A low loss
***ical
Trans IGBT Chip N-CH 1200V 50A 375000mW 3-Pin(3+Tab) TO-247 Tube
***nell
IGBT, SINGLE, 1.2KV, 50A, TO-247-3; DC Collector Current: 50A; Collector Emitter Saturation Voltage Vce(on): 1.85V; Power Dissipation Pd: 375W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of
***ernational Rectifier
1200V UltraFast Discrete IGBT in a TO-247 package with UltraFast Soft Recovery Diode
***ical
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***ment14 APAC
TRANSISTOR, BIPOLAR, N CHANNEL, 1.2KV, TO-247AD; DC Collector Current:50A; Collector Emitter Saturation Voltage Vce(on):1.9V; Power Dissipation Pd:180W; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:3Pins; Product Range:-
***ical
Trans IGBT Chip N-CH 1200V 50A 375000mW 3-Pin(3+Tab) TO-247 Tube
***icroelectronics
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***r Electronics
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***el Electronic
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***i-Key
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***DA Technology Co., Ltd.
Product Description Demo for Development.
***ernational Rectifier
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***et
Trans IGBT Chip N-CH 1.2KV 50A 3-Pin(3+Tab) TO-247AC
***SIT Distribution GmbH
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247AC
***(Formerly Allied Electronics)
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*** Electronic Components
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***Yang
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***nell
IGBT,N CH,DIODE,1200V,50A,TO-247AC; Transistor Type:IGBT; DC Collector Current:50A; Collector Emitter Voltage Vces:1.9V; Power Dissipation Pd:179W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:179W
***icroelectronics
Trench gate field-stop IGBT, H series 1200 V, 25 A high speed
***ical
Trans IGBT Chip N-CH 1200V 50A 375000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
STGWA25H120: 1200 V 50 A 375 W Trench Gate Field-Stop IGBT - TO-247-3
***r Electronics
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***icroelectronics SCT
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***DA Technology Co., Ltd.
Product Description Demo for Development.
***ical
Trans IGBT Chip N-CH 1200V 50A 428000mW 3-Pin(3+Tab) TO-247 Tube
***r Electronics
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***emi
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***ark
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*** Stop Electro
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***rchild Semiconductor
Using innovative field stop trench IGBT technology, Fairchild’s new series of field stop trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder and PFC applications.
STMicroelectronics M Series Trench Gate Field-Stop IGBTs
STMicroelectronics M Series Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. They represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short circuit capability are essential. Furthermore, a positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation. Typical applications for these devices include industrial drives, UPS, solar, and welding.Learn More
型号 制造商 描述 库存 价格
STGW25M120DF3
DISTI # 497-15058-5-ND		STMicroelectronicsIGBT 1200V 50A 375W
RoHS: Compliant
Min Qty: 600
Container: Tube		Temporarily Out of Stock
  • 600:$6.5430
STGW25M120DF3
DISTI # STGW25M120DF3		STMicroelectronicsTrans IGBT Chip N-CH 1200V 50A 3-Pin TO-247 Tube - Rail/Tube (Alt: STGW25M120DF3)
RoHS: Compliant
Min Qty: 600
Container: Tube		Americas - 0
  • 600:$5.2900
  • 1200:$5.0900
  • 2400:$4.8900
  • 3600:$4.5900
  • 6000:$4.4900
STGW25M120DF3
DISTI # STGW25M120DF3		STMicroelectronicsTrans IGBT Chip N-CH 1200V 50A 3-Pin TO-247 Tube (Alt: STGW25M120DF3)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 30:€3.7100
STGW25M120DF3
DISTI # 511-STGW25M120DF3		STMicroelectronicsIGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 25 A low loss
RoHS: Compliant		0
  • 1:$8.5700
  • 10:$7.7500
  • 25:$7.3900
  • 100:$6.4100
  • 250:$6.1300
  • 500:$5.5800
STGW25M120DF3
DISTI # IGBT1559		STMicroelectronicsIGBT 1200V 25A 1,85VTO247-3
RoHS: Compliant		Stock DE - 0Stock US - 0
  • 600:$4.8700
STGW25M120DF3STMicroelectronics 
RoHS: Compliant		Europe - 600
    STGW25M120DF3
    DISTI # STGW25M120DF3    		STMicroelectronics1200V 50A 375W TO247
    RoHS: Not Compliant    		50
    • 5:€4.9600
    • 30:€4.3600
    • 120:€4.0600
    • 300:€3.9100
    STGW25M120DF3
    DISTI # 2470026    		STMicroelectronicsIGBT, SINGLE, 1.2KV, 50A, TO-247-3
    RoHS: Compliant    		0
    • 1:£7.0300
    • 5:£6.4800
    • 10:£5.5900
    • 50:£5.2200
    • 100:£4.8500
    STGW25M120DF3
    DISTI # C1S730200974138    		STMicroelectronicsTrans IGBT Chip N-CH 1.2KV 50A 3-Pin(3+Tab) TO-247 Tube
    RoHS: Compliant    		600
    • 600:$4.3100
    • 300:$4.6800
    • 100:$5.1400
    • 50:$5.9200
    • 10:$5.9800
    • 1:$8.2500
    图片 型号 描述
    FGH40T120SQDNL4

    Mfr.#: FGH40T120SQDNL4

    OMO.#: OMO-FGH40T120SQDNL4

    		 IGBT Transistors IGBT 1200V 40A UFS
    NGTB40N120FL3WG

    Mfr.#: NGTB40N120FL3WG

    OMO.#: OMO-NGTB40N120FL3WG

    		 IGBT Transistors IGBT 1200V 40A FS3 SOLAR/
    NGTB40N120S3WG

    Mfr.#: NGTB40N120S3WG

    OMO.#: OMO-NGTB40N120S3WG

    		 IGBT Transistors IGBT 1200V 40A FS3 LOW VF
    STGW40H120DF2

    Mfr.#: STGW40H120DF2

    OMO.#: OMO-STGW40H120DF2

    		 IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 40 A high speed
    FGA25N120ANTDTU

    Mfr.#: FGA25N120ANTDTU

    OMO.#: OMO-FGA25N120ANTDTU

    		 IGBT Transistors Copak Discrete
    FGH25T120SMD-F155

    Mfr.#: FGH25T120SMD-F155

    OMO.#: OMO-FGH25T120SMD-F155

    		 IGBT Transistors 1200V, 25A Field Stop Trench IGBT
    NGTB40N120FL2WG

    Mfr.#: NGTB40N120FL2WG

    OMO.#: OMO-NGTB40N120FL2WG

    		 IGBT Transistors 1200V/40A FAST IGBT FSII
    MC14584BDTR2G

    Mfr.#: MC14584BDTR2G

    OMO.#: OMO-MC14584BDTR2G

    		 Inverters 3-18V CMOS Hex Schmitt Trigger
    STGW40H120DF2

    Mfr.#: STGW40H120DF2

    OMO.#: OMO-STGW40H120DF2-STMICROELECTRONICS

    		 IGBT 1200V 40A HS TO-247
    FGA25N120ANTDTU

    Mfr.#: FGA25N120ANTDTU

    OMO.#: OMO-FGA25N120ANTDTU-ON-SEMICONDUCTOR

    		 IGBT 1200V 50A 312W TO3P
    可用性
    库存:
    578
    订购:
    2561
    输入数量:
    STGW25M120DF3的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格（美元）
    数量
    单价
    小计金额
    1
    US$8.56
    US$8.56
    10
    US$7.74
    US$77.40
    25
    US$7.38
    US$184.50
    100
    US$6.40
    US$640.00
    250
    US$6.12
    US$1 530.00
    500
    US$5.58
    US$2 790.00
    1000
    US$4.86
    US$4 860.00
    2500
    US$4.68
    US$11 700.00
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