STGW15H120F2

STGW15H120F2
Mfr. #:
STGW15H120F2
制造商:
STMicroelectronics
描述:
IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 15 A high speed
生命周期:
制造商新产品。
数据表:
STGW15H120F2 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
STGW15H120F2 更多信息 STGW15H120F2 Product Details
产品属性
属性值
制造商:
意法半导体
产品分类:
IGBT晶体管
RoHS:
Y
技术:
包装/案例:
TO-247-3
安装方式:
通孔
配置:
单身的
集电极-发射极电压 VCEO 最大值:
1200 V
集电极-发射极饱和电压:
2.1 V
最大栅极发射极电压:
20 V
25 C 时的连续集电极电流:
30 A
Pd - 功耗:
259 W
最低工作温度:
- 55 C
最高工作温度:
+ 175 C
系列:
STGW15H120F2
打包:
管子
连续集电极电流 Ic 最大值:
15 A
品牌:
意法半导体
栅极-发射极漏电流:
250 nA
产品类别:
IGBT晶体管
出厂包装数量:
600
子类别:
IGBT
单位重量:
1.340411 oz
Tags
STGW15, STGW1, STGW, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Japan
Trans IGBT Chip N-CH 1200V 30A 259000mW 3-Pin(3+Tab) TO-247 Tube
***et Europe
Trans IGBT Chip N-CH 1200V 30A 3-Pin TO-247 Tube
***i-Key
IGBT H-SERIES 1200V 15A TO-247
***ronik
IGBT 1200V 15A 2,1V TO247-3
***ark
Ptd High Voltage
IGBT H Series
STMicroelectronics 1200V H Series Trench Gate Field-Stop IGBTs represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. With ST's advanced Trench-Gate Field-Stop High-Speed technology, these IGBTs have a 5μs minimum short circuit withstand time at TJ=150°C, minimal collector current turn off tail, and very low saturation voltage (Vce(sat)) down to 2.1V (typical) to minimize energy losses during switching and when turned on. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.
型号 制造商 描述 库存 价格
STGW15H120F2
DISTI # 30607521
STMicroelectronicsTrans IGBT Chip N-CH 1.2KV 30A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
20
  • 6:$4.2713
STGW15H120F2
DISTI # 497-14713-5-ND
STMicroelectronicsIGBT H-SERIES 1200V 15A TO-247
RoHS: Compliant
Min Qty: 1
Container: Tube
On Order
  • 1020:$4.0187
  • 510:$4.5438
  • 120:$5.1475
  • 30:$5.8563
  • 1:$6.7300
STGW15H120F2
DISTI # C1S730200906164
STMicroelectronicsTrans IGBT Chip N-CH 1200V 30A 259000mW 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
20
  • 1:$3.3500
STGW15H120F2
DISTI # STGW15H120F2
STMicroelectronicsTrans IGBT Chip N-CH 1200V 30A 3-Pin TO-247 Tube - Rail/Tube (Alt: STGW15H120F2)
RoHS: Compliant
Min Qty: 600
Container: Tube
Americas - 0
  • 600:$3.6900
  • 1200:$3.4900
  • 2400:$3.3900
  • 3600:$3.1900
  • 6000:$3.0900
STGW15H120F2
DISTI # STGW15H120F2
STMicroelectronicsTrans IGBT Chip N-CH 1200V 30A 3-Pin TO-247 Tube (Alt: STGW15H120F2)
RoHS: Compliant
Min Qty: 1
Container: Tube
Europe - 0
  • 1:€4.3900
  • 10:€3.9900
  • 25:€3.8900
  • 50:€3.6900
  • 100:€3.5900
  • 500:€3.3900
  • 1000:€3.1900
STGW15H120F2
DISTI # 511-STGW15H120F2
STMicroelectronicsIGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 15 A high speed
RoHS: Compliant
0
  • 600:$3.8700
  • 1200:$3.3700
图片 型号 描述
STGW15M120DF3

Mfr.#: STGW15M120DF3

OMO.#: OMO-STGW15M120DF3

IGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 15 A low loss
STGW15H120DF2

Mfr.#: STGW15H120DF2

OMO.#: OMO-STGW15H120DF2

IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 15 A high speed
STGW15H120F2

Mfr.#: STGW15H120F2

OMO.#: OMO-STGW15H120F2

IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 15 A high speed
STGW15S120DF3

Mfr.#: STGW15S120DF3

OMO.#: OMO-STGW15S120DF3

IGBT Transistors IGBT & Power Bipolar
STGW15M120DF3

Mfr.#: STGW15M120DF3

OMO.#: OMO-STGW15M120DF3-STMICROELECTRONICS

IGBT Transistors IGBT & Power Bipola
STGW15H120F2

Mfr.#: STGW15H120F2

OMO.#: OMO-STGW15H120F2-STMICROELECTRONICS

IGBT Transistors IGBT & Power Bipola
STGW15H120DF2

Mfr.#: STGW15H120DF2

OMO.#: OMO-STGW15H120DF2-STMICROELECTRONICS

IGBT H-SERIES 1200V 15A TO-247
可用性
库存:
Available
订购:
5000
输入数量:
STGW15H120F2的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
600
US$3.87
US$2 322.00
1200
US$3.37
US$4 044.00
3000
US$3.25
US$9 750.00
从...开始
最新产品
  • PWD13F60 High-Density Power Driver
    STMicroelectronics' PWD13F60 integrated power MOSFET full bridge with embedded gate drivers in a 13 mm x 10 mm outline.
  • STSPIN32F0 Motor-Control System
    STMicroelectronics' STSPIN32F0 motor-control system-in-package combines the power and flexibility of a microcontroller-based drive with ease of use and space efficiency.
  • STripFET VI DeepGATE Series Power MOSFETs
    STMicroelectronics' 80 V MOSFETs with DeepGATE process integration result a more efficient and denser design in applications such as motor control and DC/DC converters.
  • Compare STGW15H120F2
    STGW15H120DF2 vs STGW15H120F2 vs STGW15M120DF3
  • ESDA8P30-1T2 TVS Diode
    STMicroelectronics' ESDA8P30-1T2 unidirectional, single-line TVS diode provides USB VBUS, power supply, and battery protection.
  • CLOUD-ST25TA02KB Evaluation Board
    STMicroelectronics' CLOUD-ST25TA02KB evaluation board for the ST25TA02KB-P device can be configured for various uses such as indicating field detection.
Top