STGW15H120DF2

Mfr. #:: STGW15H120DF2
制造商:: STMicroelectronics
描述:: IGBT H-SERIES 1200V 15A TO-247
生命周期:: 制造商新产品。
数据表:: STGW15H120DF2 数据表
交货:: DHL FedEx Ups TNT EMS
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更多信息:: STGW15H120DF2 更多信息 STGW15H120DF2 Product Details

产品属性
属性值

制造商: 意法半导体

产品分类: IGBT - 单

系列: 900-1300V IGBTs

打包: 管子

单位重量: 1.340411 oz

安装方式: 通孔

包装盒: TO-247-3

输入类型: 标准

安装型: 通孔

供应商-设备-包: TO-247

配置: 单身的

最大功率: 259W

反向恢复时间trr: 231ns

电流收集器 Ic-Max: 30A

电压收集器发射极击穿最大值: 1200V

IGBT型: 海沟场停止

电流收集器脉冲Icm: 60A

Vce-on-Max-Vge-Ic: 2.6V @ 15V, 15A

开关能源: 380μJ (on), 370μJ (off)

栅极电荷: 67nC

Td-on-off-25°C: 23ns/111ns

测试条件: 600V, 15A, 10 Ohm, 15V

钯功耗: 259 W

最高工作温度: + 175 C

最低工作温度: - 55 C

集电极-发射极-电压-VCEO-Max: 1200 V

集电极-发射极-饱和-电压: 2.1 V

25-C 时的连续集电极电流: 30 A

栅极-发射极-漏电流: 250 nA

最大栅极发射极电压: 20 V

连续集电极电流 Ic-Max: 15 A

Tags: STGW15, STGW1, STGW, STG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

STGW15H120DF2 描述

***ical: Trans IGBT Chip N-CH 1200V 30A 259000mW 3-Pin(3+Tab) TO-247 Tube

***p One Stop Global: Trans IGBT Chip N-CH 1.2KV 30A 3-Pin(3+Tab) TO-247 Tube

***et Europe: Trans IGBT Chip N-CH 1200V 30A 3-Pin TO-247 Tube

***ure Electronics: field-stop, H series 1200 V, 15 A high speed

***i-Key: IGBT H-SERIES 1200V 15A TO-247

***ronik: IGBT 1200V 30A 2,1V TO247-3

***ukat: 1200V 30A 259W TO247

***ark: Ptd High Voltage

STGW15H120DF2 更多信息

IGBT H Series: STMicroelectronics 1200V H Series Trench Gate Field-Stop IGBTs represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. With ST's advanced Trench-Gate Field-Stop High-Speed technology, these IGBTs have a 5μs minimum short circuit withstand time at TJ=150°C, minimal collector current turn off tail, and very low saturation voltage (Vce(sat)) down to 2.1V (typical) to minimize energy losses during switching and when turned on. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Market price

型号	制造商	描述	库存	价格
STGW15H120DF2 DISTI # 32655826	STMicroelectronics	Trans IGBT Chip N-CH 1200V 30A 259000mW 3-Pin(3+Tab) TO-247 Tube	480	1000:$3.5083 500:$4.0281 480:$4.6258
STGW15H120DF2 DISTI # 497-14712-5-ND	STMicroelectronics	IGBT H-SERIES 1200V 15A TO-247 RoHS: Compliant Min Qty: 1 Container: Tube	600In Stock	2520:$3.5000 510:$4.0687 120:$4.6725 30:$5.3813 10:$5.6440 1:$6.2500
STGW15H120DF2 DISTI # STGW15H120DF2	STMicroelectronics	Trans IGBT Chip N-CH 1200V 30A 3-Pin TO-247 Tube (Alt: STGW15H120DF2) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 160	1000:€3.1900 500:€3.3900 100:€3.5900 50:€3.6900 25:€3.8900 10:€3.9900 1:€4.3900
STGW15H120DF2 DISTI # STGW15H120DF2	STMicroelectronics	Trans IGBT Chip N-CH 1200V 30A 3-Pin TO-247 Tube - Rail/Tube (Alt: STGW15H120DF2) RoHS: Compliant Min Qty: 600 Container: Tube	Americas - 0	6000:$3.0900 3000:$3.1900 1800:$3.3900 1200:$3.4900 600:$3.6900
STGW15H120DF2 DISTI # 26Y5810	STMicroelectronics	PTD HIGH VOLTAGE	0	500:$3.2500 250:$3.3500 100:$4.0000 50:$4.3000 25:$4.6000 10:$5.0500 1:$5.6300
STGW15H120DF2 DISTI # 511-STGW15H120DF2	STMicroelectronics	IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 15 A high speed RoHS: Compliant	0	1:$5.9400 10:$5.3700 25:$5.1200 100:$4.4500 250:$4.2500 500:$3.8700 1000:$3.3700
STGW15H120DF2 DISTI # XSKDRABS0031143	STMicroelectronics	AdjustablePositiveLDORegulator,0.5VMin,4VMax,0.12VDropout,PDSO8 RoHS: Compliant	130 in Stock0 on Order	130:$5.9160
STGW15H120DF2 DISTI # IGBT1454	STMicroelectronics	IGBT 1200V 30A 2,1VTO247-3	Stock DE - 0Stock HK - 0Stock US - 0	600:$4.1300
STGW15H120DF2 DISTI # STGW15H120DF2	STMicroelectronics	1200V 30A 259W TO247 RoHS: Not Compliant	0	5:€4.2800 30:€3.8800 120:€3.6800 300:€3.5400

图片	型号	描述
	Mfr.#: STGW15M120DF3 OMO.#: OMO-STGW15M120DF3	IGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 15 A low loss
	Mfr.#: STGW15H120DF2 OMO.#: OMO-STGW15H120DF2	IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 15 A high speed
	Mfr.#: STGW15H120F2 OMO.#: OMO-STGW15H120F2	IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 15 A high speed
	Mfr.#: STGW15S120DF3 OMO.#: OMO-STGW15S120DF3	IGBT Transistors IGBT & Power Bipolar
	Mfr.#: STGW15M120DF3 OMO.#: OMO-STGW15M120DF3-STMICROELECTRONICS	IGBT Transistors IGBT & Power Bipola
	Mfr.#: STGW15H120F2 OMO.#: OMO-STGW15H120F2-STMICROELECTRONICS	IGBT Transistors IGBT & Power Bipola
	Mfr.#: STGW15H120DF2 OMO.#: OMO-STGW15H120DF2-STMICROELECTRONICS	IGBT H-SERIES 1200V 15A TO-247

STGW15H120DF2

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes