CGHV60075D5

Mfr. #:: CGHV60075D5
制造商:: N/A
描述:: RF JFET Transistors GaN HEMT Die DC-6.0GHz, 75 Watt
生命周期:: 制造商新产品。
数据表:: CGHV60075D5 数据表
交货:: DHL FedEx Ups TNT EMS
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ECAD Model:
更多信息:: CGHV60075D5 更多信息

产品属性
属性值

制造商：: 科沃

产品分类：: 射频 JFET 晶体管

RoHS：: Y

晶体管类型：: HEMT

技术：: 氮化镓碳化硅

获得：: 16 dB

晶体管极性：: N通道

输出功率：: 30 W

打包：: 托盘

工作频率：: 3.5 GHz

系列：: T2G

类型：: 氮化镓碳化硅 HEMT

品牌：: 科沃

湿气敏感：: 是的

产品类别：: 射频 JFET 晶体管

出厂包装数量：: 36

子类别：: 晶体管

第 # 部分别名：: 1099983

Tags: CGHV6007, CGHV600, CGHV6, CGHV, CGH

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CGHV60075D5 描述

***i-Key: RF MOSFET HEMT 50V DIE

CGHV60075D5 更多信息

CGHV600 6GHz GaN HEMTs: Wolfspeed CGHV600 6GHz gallium nitride (GaN) High Electron Mobility Transistors (HEMTs) provide superior performance compared with silicon (Si) or gallium arsenide (GaAs) transistors. CGHV600 GaN HEMTs offer higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. These transistors also offer greater power density and wider bandwidths. CGHV600 series devices are ideal for use in a variety of applications, including cellular infrastructure and Class A, AB, and linear amplifiers.Learn More

Market price

型号	制造商	描述	库存	价格
CGHV60075D5-GP4 DISTI # CGHV60075D5-GP4-ND	Wolfspeed	RF MOSFET HEMT 50V DIE RoHS: Compliant Min Qty: 10 Container: Tray	30In Stock	10:$53.5700
CGHV60075D5-GP4 DISTI # CGHV60075D5-GP4	Wolfspeed	RF POWER TRANSISTOR RoHS: Compliant	0	50:$53.5700

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