CGHV60170D

Mfr. #:: CGHV60170D
制造商:: N/A
描述:: RF JFET Transistors GaN HEMT Die DC-6.0GHz, 170 Watt
生命周期:: 制造商新产品。
数据表:: CGHV60170D 数据表
交货:: DHL FedEx Ups TNT EMS
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ECAD Model:
更多信息:: CGHV60170D 更多信息

产品属性
属性值

制造商：: 科沃

产品分类：: 射频 JFET 晶体管

RoHS：: Y

技术：: 氮化镓碳化硅

Vds - 漏源击穿电压：: 32 V

Vgs - 栅源击穿电压：: 100 V

Pd - 功耗：: 45 W

安装方式：: 贴片/贴片

打包：: 托盘

配置：: 单身的

高度：: 4.064 mm

长度：: 9.652 mm

宽度：: 5.842 mm

品牌：: 科沃

栅源截止电压：: - 2.9 V

湿气敏感：: 是的

产品类别：: 射频 JFET 晶体管

出厂包装数量：: 50

子类别：: 晶体管

第 # 部分别名：: 1092444

Tags: CGHV6, CGHV, CGH

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CGHV60170D 描述

***i-Key: RF MOSFET HEMT 50V DIE

CGHV60170D 更多信息

GaN HEMTs: Cree GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offers greater power density and wider bandwidths compared to Si and GaAs transistors. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.

Market price

型号	制造商	描述	库存	价格
CGHV60170D-GP4 DISTI # CGHV60170D-GP4-ND	Wolfspeed	RF MOSFET HEMT 50V DIE RoHS: Compliant Min Qty: 10 Container: Tray	10In Stock	10:$156.7360
CGHV60170D DISTI # 941-CGHV60170D	Cree, Inc.	RF JFET Transistors GaN HEMT Die DC-6.0GHz, 170 Watt RoHS: Compliant	40	10:$156.4900
CGHV60170D-GP4 DISTI # CGHV60170D-GP4	Wolfspeed	RF POWER TRANSISTOR RoHS: Compliant	0	50:$156.7400

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