CGHV60040D

Mfr. #:: CGHV60040D
制造商:: N/A
描述:: RF JFET Transistors DC-6GHz 40W GaN 50Volt
生命周期:: 制造商新产品。
数据表:: CGHV60040D 数据表
交货:: DHL FedEx Ups TNT EMS
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ECAD Model:
更多信息:: CGHV60040D 更多信息

产品属性
属性值

制造商: Cree/Wolfspeed

产品分类: 晶体管 - FET、MOSFET - 单

打包: 凝胶包

安装方式: 贴片/贴片

工作温度范围: -

包装盒: 裸片

技术: 氮化镓碳化硅

配置: 双重的

晶体管型: HEMT

获得: 18 dB

班级: -

输出功率: 40 W

钯功耗: -

最高工作温度: -

最低工作温度: -

应用: -

工作频率: 6 GHz

Id 连续漏极电流: 3.2 A

Vds-漏-源-击穿电压: 50 V

VGS-th-Gate-Source-Threshold-Voltage: -

Rds-On-Drain-Source-Resistance: -

晶体管极性: N通道

正向跨导最小值: -

开发套件: -

VGS-栅极-源极击穿电压: -

栅源截止电压: -

最大漏栅电压: -

NF-噪声系数: -

P1dB-压缩点: -

Tags: CGHV600, CGHV6, CGHV, CGH

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CGHV60040D 更多信息

GaN HEMTs: Cree GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offers greater power density and wider bandwidths compared to Si and GaAs transistors. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.

CGHV600 6GHz GaN HEMTs: Wolfspeed CGHV600 6GHz gallium nitride (GaN) High Electron Mobility Transistors (HEMTs) provide superior performance compared with silicon (Si) or gallium arsenide (GaAs) transistors. CGHV600 GaN HEMTs offer higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. These transistors also offer greater power density and wider bandwidths. CGHV600 series devices are ideal for use in a variety of applications, including cellular infrastructure and Class A, AB, and linear amplifiers.Learn More

Market price

型号	制造商	描述	库存	价格
CGHV60040D-GP4 DISTI # CGHV60040D-GP4-ND	Wolfspeed	RF MOSFET HEMT 50V DIE RoHS: Compliant Min Qty: 10 Container: Tray	550In Stock	10:$42.3360
CGHV60040D DISTI # 941-CGHV60040D	Cree, Inc.	RF JFET Transistors GaN HEMT Die DC-6.0GHz, 40 Watt RoHS: Compliant	200	10:$42.3400

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