MR0A08BMA35R

Mfr. #:: MR0A08BMA35R
制造商:: Everspin Technologies
描述:: IC RAM 1M PARALLEL 48FBGA
生命周期:: 制造商新产品。
数据表:: MR0A08BMA35R 数据表
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更多信息:: MR0A08BMA35R 更多信息

产品属性
属性值

制造商: Everspin 技术公司

产品分类: 记忆

系列: MR0A08B

打包: 卷带 (TR) 替代包装

安装方式: 贴片/贴片

包装盒: BGA-48

工作温度: 0°C ~ 70°C (TA)

界面: 平行线

电压供应: 3 V ~ 3.6 V

供应商-设备-包: 48-FBGA (8x8)

内存大小: 1M (128K x 8)

内存型: MRAM（磁阻RAM）

速度: 35ns

访问时间: 35 ns

格式化内存: 内存

最高工作温度: + 125 C

最低工作温度: - 40 C

工作电源电流: 55 mA

接口类型: 平行线

组织: 128 k x 8

数据总线宽度: 8 bit

最大电源电压: 3.6 V

电源电压最小值: 3 V

Tags: MR0A08BM, MR0A0, MR0A, MR0

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

MR0A08BMA35R 评级和评论

V***y

Good goods. Delivery 3 months!!!

2019-04-15

G***s

very well!super!

2019-05-07

T***v

2019-09-03

MR0A08BMA35R 描述

***i-Key: IC RAM 1M PARALLEL 48FBGA

MR0A08BMA35R 更多信息

Magnetoresistive Random Access Memory (MRAM): Everspin Technologies Magnetoresistive Random Access Memory (MRAM) uses a 1 Transistor – 1 Magnetic Tunnel Junction (1T-1MTJ) architecture. These MRAM devices offer significantly long Data Retention (20+ years) and unlimited endurance. The data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification.

Everspin MRAM

MR0A08B / MR0D08B / MR0A16A 1Mb Parallel MRAM: Everspin Technologies MR0A08B, MR0D08B, and MR0A16A are 1,048,576-bit magnetoresistive random access memory (MRAM) devices. The Everspin MRAM devices are available in a variety of specifications, such as dual supply, serial SPI, and organized as 131,072 words of 8 bits or 65,536 words of 16 bits. These MRAM devices are as fast 35ns or 45ns read/write timing cycles with no write delays and unlimited read/write endurance.

Market price

型号	制造商	描述	库存	价格
MR0A08BMA35R DISTI # MR0A08BMA35R-ND	Everspin Technologies	IC RAM 1M PARALLEL 48FBGA RoHS: Compliant Min Qty: 2000 Container: Tape & Reel (TR)	Temporarily Out of Stock	2000:$8.2460
MR0A08BMA35 DISTI # 936-MR0A08BMA35	Everspin Technologies	NVRAM 1Mb 3.3V 128Kx8 35ns Parallel MRAM RoHS: Compliant	693	1:$10.8600 10:$10.0600 25:$9.8300 50:$9.7800 100:$8.6100 250:$8.1800 500:$8.1000 1000:$7.9800
MR0A08BMA35R DISTI # 936-MR0A08BMA35R	Everspin Technologies	NVRAM 1Mb 3.3V 128Kx8 35ns Parallel MRAM RoHS: Compliant	0	1:$11.2200 10:$10.4000 25:$10.1600 50:$10.1100 100:$8.9000 250:$8.4600 500:$8.3700 1000:$8.2500 2000:$7.8700

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	Mfr.#: MR0A08BCMA35 OMO.#: OMO-MR0A08BCMA35-EVERSPIN-TECHNOLOGIES	IC RAM 1M PARALLEL 48FBGA
	Mfr.#: MR0A08BYS35 OMO.#: OMO-MR0A08BYS35-EVERSPIN-TECHNOLOGIES	NVRAM 1Mb 3.3V 128Kx8 35ns Parallel MRAM
	Mfr.#: MR0A08BMYS35 OMO.#: OMO-MR0A08BMYS35-1190	全新原装