STGW20H65FB

Mfr. #:: STGW20H65FB
制造商:: STMicroelectronics
描述:: IGBT Transistors IGBT & Power Bipola
生命周期:: 制造商新产品。
数据表:: STGW20H65FB 数据表
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ECAD Model:
更多信息:: STGW20H65FB 更多信息 STGW20H65FB Product Details

产品属性
属性值

制造商: 意法半导体

产品分类: IGBT - 单

系列: 600-650V IGBTs

打包: 管子

单位重量: 1.340411 oz

安装方式: 通孔

包装盒: TO-247-3

输入类型: 标准

安装型: 通孔

供应商-设备-包: TO-247-3

配置: 单身的

最大功率: 168W

反向恢复时间trr: -

电流收集器 Ic-Max: 40A

电压收集器发射极击穿最大值: 650V

IGBT型: 海沟场停止

电流收集器脉冲Icm: 80A

Vce-on-Max-Vge-Ic: 2V @ 15V, 20A

开关能源: 77μJ (on), 170μJ (off)

栅极电荷: 120nC

Td-on-off-25°C: 30ns/139ns

测试条件: 400V, 20A, 10 Ohm, 15V

钯功耗: 168 W

最高工作温度: + 175 C

最低工作温度: - 55 C

集电极-发射极-电压-VCEO-Max: 650 V

集电极-发射极-饱和-电压: 1.55 V

25-C 时的连续集电极电流: 40 A

栅极-发射极-漏电流: 250 nA

最大栅极发射极电压: 20 V

连续集电极电流 Ic-Max: 20 A

Tags: STGW20, STGW2, STGW, STG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

STGW20H65FB 描述

***ical: Trans IGBT Chip N-CH 650V 40A 168000mW 3-Pin(3+Tab) TO-247 Tube

***ure Electronics: STGW20H65 Series 650 V 20 A High Speed Trench Gate Field-Stop IGBT - TO-247

***et Europe: Trans IGBT Chip N-CH 650V 40A 3-Pin TO-247 Tube

***ronik: IGBT 650V 20A 1,55V TO247-3

***i-Key: IGBT 650V 40A 168W TO247

***ark: Ptd High Voltage

STGW20H65FB 更多信息

IGBT HB/HB2 Series: STMicroelectronics IGBT HB/HB2 Series IGBTs combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary trench gate field-stop (TGFS) structure.

Market price

型号	制造商	描述	库存	价格
STGW20H65FB DISTI # 497-15132-5-ND	STMicroelectronics	IGBT 650V 40A 168W TO247 RoHS: Compliant Min Qty: 1 Container: Tube	330In Stock	1020:$2.0286 510:$2.4053 120:$2.8256 30:$3.2603 1:$3.8400
STGW20H65FB DISTI # STGW20H65FB	STMicroelectronics	Trans IGBT Chip N-CH 650V 40A 3-Pin TO-247 Tube - Rail/Tube (Alt: STGW20H65FB) RoHS: Compliant Min Qty: 600 Container: Tube	Americas - 0	600:$1.9900 1200:$1.8900 2400:$1.7900 3600:$1.6900 6000:$1.6900
STGW20H65FB DISTI # 511-STGW20H65FB	STMicroelectronics	IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 20 A high speed RoHS: Compliant	468	1:$3.6600 10:$3.1100 100:$2.7000 250:$2.5600 500:$2.3000
STGW20H65FB	ST Microwave Corporation	Insulated Gate Bipolar Transistor, 40A I(C), 650V V(BR)CES, N-Channel RoHS: Compliant	Europe - 596
STGW20H65FB	STMicroelectronics		1503

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