STGY80H65DFB

STGY80H65DFB
Mfr. #:
STGY80H65DFB
制造商:
STMicroelectronics
描述:
IGBT Transistors Trench gte FieldStop IGBT 650V 80A
生命周期:
制造商新产品。
数据表:
STGY80H65DFB 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
更多信息:
STGY80H65DFB 更多信息 STGY80H65DFB Product Details
产品属性
属性值
制造商
意法半导体
产品分类
IGBT - 单
系列
STGY80H65
打包
管子
安装方式
通孔
包装盒
TO-247-3
输入类型
标准
安装型
通孔
供应商-设备-包
MAX247
配置
单身的
最大功率
469W
反向恢复时间trr
85ns
电流收集器 Ic-Max
120A
电压收集器发射极击穿最大值
650V
IGBT型
海沟场停止
电流收集器脉冲Icm
240A
Vce-on-Max-Vge-Ic
2V @ 15V, 80A
开关能源
2.1mJ (on), 1.5mJ (off)
栅极电荷
414nC
Td-on-off-25°C
84ns/280ns
测试条件
400V, 80A, 10 Ohm, 15V
钯功耗
469 W
最高工作温度
+ 175 C
最低工作温度
- 55 C
集电极-发射极-电压-VCEO-Max
650 V
集电极-发射极-饱和-电压
1.9 V
25-C 时的连续集电极电流
120 A
栅极-发射极-漏电流
250 nA
最大栅极发射极电压
+/- 20 V
连续集电极电流 Ic-Max
80 A
Tags
STGY, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
HB Series 650 V 80 A High Speed Trench Gate Field-Stop IGBT - Max247
***ical
Trans IGBT Chip N-CH 650V 120A 469000mW 3-Pin(3+Tab) Max247 Tube
***p One Stop Global
Trans IGBT Chip N-CH 650V 120A 3-Pin(3+Tab) Max247 Tube
***et Europe
Trans IGBT Chip N-CH 650V 120A 3-Pin Max247 Tube
***ark
Igbt & Power Bipolar
***i-Key
IGBT 650V 120A 469W MAX247
型号 制造商 描述 库存 价格
STGY80H65DFB
DISTI # 497-14564-5-ND
STMicroelectronicsIGBT 650V 120A 469W MAX247
RoHS: Compliant
Min Qty: 1
Container: Tube
362In Stock
  • 120:$11.1077
  • 30:$12.6067
  • 1:$14.3100
STGY80H65DFB
DISTI # STGY80H65DFB
STMicroelectronicsTrans IGBT Chip N-CH 650V 120A 3-Pin Max247 Tube - Rail/Tube (Alt: STGY80H65DFB)
RoHS: Compliant
Min Qty: 600
Container: Tube
Americas - 0
    STGY80H65DFB
    DISTI # 511-STGY80H65DFB
    STMicroelectronicsIGBT Transistors Trench gte FieldStop IGBT 650V 80A
    RoHS: Compliant
    32
    • 1:$13.6200
    • 10:$12.5200
    • 25:$12.0000
    • 50:$11.3500
    • 100:$10.5700
    • 250:$10.0000
    • 500:$9.3600
    STGY80H65DFBSTMicroelectronicsHB Series 650 V 80 A High Speed Trench Gate Field-Stop IGBT - Max247
    RoHS: Compliant
    600Tube
    • 2:$9.4100
    • 10:$8.9000
    • 25:$8.7100
    • 50:$8.5700
    • 100:$8.4300
    STGY80H65DFBSTMicroelectronics 766
      图片 型号 描述
      STGY80H65DFB

      Mfr.#: STGY80H65DFB

      OMO.#: OMO-STGY80H65DFB

      IGBT Transistors Trench gte FieldStop IGBT 650V 80A
      STGY80H65DFB

      Mfr.#: STGY80H65DFB

      OMO.#: OMO-STGY80H65DFB-STMICROELECTRONICS

      IGBT Transistors Trench gte FieldStop IGBT 650V 80A
      可用性
      库存:
      Available
      订购:
      5000
      输入数量:
      STGY80H65DFB的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
      参考价格(美元)
      数量
      单价
      小计金额
      1
      US$12.64
      US$12.64
      10
      US$12.01
      US$120.13
      100
      US$11.38
      US$1 138.05
      500
      US$10.75
      US$5 374.15
      1000
      US$10.12
      US$10 116.00
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