STGY80H65DFB

STGY80H65DFB
Mfr. #:
STGY80H65DFB
制造商:
STMicroelectronics
描述:
IGBT Transistors Trench gte FieldStop IGBT 650V 80A
生命周期:
制造商新产品。
数据表:
STGY80H65DFB 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
STGY80H65DFB 更多信息 STGY80H65DFB Product Details
产品属性
属性值
制造商:
意法半导体
产品分类:
IGBT晶体管
RoHS:
Y
技术:
包装/案例:
Max247-3
安装方式:
通孔
配置:
单身的
集电极-发射极电压 VCEO 最大值:
650 V
集电极-发射极饱和电压:
1.9 V
最大栅极发射极电压:
20 V
25 C 时的连续集电极电流:
120 A
Pd - 功耗:
469 W
最低工作温度:
- 55 C
最高工作温度:
+ 175 C
系列:
STGY80H65
打包:
管子
连续集电极电流 Ic 最大值:
80 A
品牌:
意法半导体
栅极-发射极漏电流:
250 nA
产品类别:
IGBT晶体管
出厂包装数量:
30
子类别:
IGBT
Tags
STGY, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
HB Series 650 V 80 A High Speed Trench Gate Field-Stop IGBT - Max247
***ical
Trans IGBT Chip N-CH 650V 120A 469000mW 3-Pin(3+Tab) Max247 Tube
***p One Stop Global
Trans IGBT Chip N-CH 650V 120A 3-Pin(3+Tab) Max247 Tube
***et Europe
Trans IGBT Chip N-CH 650V 120A 3-Pin Max247 Tube
***ark
Igbt & Power Bipolar
***i-Key
IGBT 650V 120A 469W MAX247
型号 制造商 描述 库存 价格
STGY80H65DFB
DISTI # 497-14564-5-ND
STMicroelectronicsIGBT 650V 120A 469W MAX247
RoHS: Compliant
Min Qty: 1
Container: Tube
362In Stock
  • 120:$11.1077
  • 30:$12.6067
  • 1:$14.3100
STGY80H65DFB
DISTI # STGY80H65DFB
STMicroelectronicsTrans IGBT Chip N-CH 650V 120A 3-Pin Max247 Tube - Rail/Tube (Alt: STGY80H65DFB)
RoHS: Compliant
Min Qty: 600
Container: Tube
Americas - 0
    STGY80H65DFB
    DISTI # 511-STGY80H65DFB
    STMicroelectronicsIGBT Transistors Trench gte FieldStop IGBT 650V 80A
    RoHS: Compliant
    32
    • 1:$13.6200
    • 10:$12.5200
    • 25:$12.0000
    • 50:$11.3500
    • 100:$10.5700
    • 250:$10.0000
    • 500:$9.3600
    STGY80H65DFBSTMicroelectronicsHB Series 650 V 80 A High Speed Trench Gate Field-Stop IGBT - Max247
    RoHS: Compliant
    600Tube
    • 2:$9.4100
    • 10:$8.9000
    • 25:$8.7100
    • 50:$8.5700
    • 100:$8.4300
    STGY80H65DFBSTMicroelectronics 766
      图片 型号 描述
      STGY80H65DFB

      Mfr.#: STGY80H65DFB

      OMO.#: OMO-STGY80H65DFB

      IGBT Transistors Trench gte FieldStop IGBT 650V 80A
      STGY80H65DFB

      Mfr.#: STGY80H65DFB

      OMO.#: OMO-STGY80H65DFB-STMICROELECTRONICS

      IGBT Transistors Trench gte FieldStop IGBT 650V 80A
      可用性
      库存:
      32
      订购:
      2015
      输入数量:
      STGY80H65DFB的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
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