OMO ElectronicOMO Electronic
Expand menu
0 购物车

SCTW90N65G2V

SCTW90N65G2V
Mfr. #:
SCTW90N65G2V
制造商:
STMicroelectronics
描述:
SILICON CARBIDE POWER MOSFET 650
生命周期:
制造商新产品。
数据表:
SCTW90N65G2V 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
SCTW90N65G2V 更多信息 SCTW90N65G2V Product Details
产品属性
属性值
Tags
SCTW, SCT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***va Crawler
Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25 C) in an HiP247 package
***ow.cn
Trans MOSFET N-CH SiC 650V 119A Automotive 3-Pin(3+Tab) HIP-247 Tube
***ure Electronics
N-Channel 650 V 24 mOhm 565 W Through Hole Silicon Power Mosfet - HiP-247
***nell
MOSFET, N-CH, 650V, 119A, 200DEG C, 565W;
***et
N-CHANNEL 650 V, 0.029 OHM TYP., 90 A SICMOSFET
***icroelectronics SCT
SiC MOSFETs, 650V ,119A, 24mΩ, HIP247
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
650 Silicon-Carbide (SiC) MOSFETs
STMicroelectronics 650 Silicon-Carbide (SiC) MOSFETs feature very low on-state resistance (RDS(on)) per area combined with excellent switching performance. This translates into more efficient and compact systems. Compared with silicon MOSFETs, SiC MOSFETs exhibit low on-state resistance per area even at high temperatures. SiC MOSFETs also feature excellent switching performance versus the best-in-class IGBTs in all temperature ranges. This simplifies the thermal design of power electronic systems.
型号 制造商 描述 库存 价格
SCTW90N65G2V
DISTI # V36:1790_17702706		STMicroelectronicsN-channel 650 V SiC MOSFET0
    SCTW90N65G2V
    DISTI # 497-18351-ND    		STMicroelectronicsSILICON CARBIDE POWER MOSFET 650
    RoHS: Compliant
    Container: Tube    		Temporarily Out of Stock
      SCTW90N65G2V
      DISTI # SCTW90N65G2V      		STMicroelectronicsN-CHANNEL 650 V, 0.029 OHM TYP., 90 A SICMOSFET - Rail/Tube (Alt: SCTW90N65G2V)
      RoHS: Not Compliant
      Min Qty: 30
      Container: Tube      		Americas - 0
      • 300:$38.2900
      • 150:$39.0900
      • 90:$40.8900
      • 60:$42.7900
      • 30:$44.8900
      SCTW90N65G2V
      DISTI # 02AH6930      		STMicroelectronicsPTD WBG & POWER RF0
      • 1:$37.5000
      SCTW90N65G2V
      DISTI # 511-SCTW90N65G2V      		STMicroelectronicsMOSFET Silicon carbide Power MOSFET 650 V, 90 A, 22 mOhm (typ. TJ = 150 C) in an HiP247 package
      RoHS: Compliant      		0
      • 1:$49.5000
      • 5:$48.3900
      • 10:$46.5000
      图片 型号 描述
      SCTW90N65G2V

      Mfr.#: SCTW90N65G2V

      OMO.#: OMO-SCTW90N65G2V

      		 MOSFET Silicon carbide Power MOSFET 650 V, 90 A, 22 mOhm (typ. TJ = 150 C) in an HiP247 package
      SCTW90N65G2V

      Mfr.#: SCTW90N65G2V

      OMO.#: OMO-SCTW90N65G2V-STMICROELECTRONICS

      		 SILICON CARBIDE POWER MOSFET 650
      可用性
      库存:
      Available
      订购:
      1500
      输入数量:
      SCTW90N65G2V的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
      参考价格（美元）
      数量
      单价
      小计金额
      1
      US$56.25
      US$56.25
      10
      US$53.44
      US$534.38
      100
      US$50.62
      US$5 062.50
      500
      US$47.81
      US$23 906.25
      1000
      US$45.00
      US$45 000.00
      从...开始
      最新产品
      • PWD13F60 High-Density Power Driver
        PWD13F60 High-Density Power Driver
        STMicroelectronics' PWD13F60 integrated power MOSFET full bridge with embedded gate drivers in a 13 mm x 10 mm outline.
      • STSPIN32F0 Motor-Control System
        STSPIN32F0 Motor-Control System
        STMicroelectronics' STSPIN32F0 motor-control system-in-package combines the power and flexibility of a microcontroller-based drive with ease of use and space efficiency.
      • STripFET VI DeepGATE Series Power MOSFETs
        STripFET VI DeepGATE Series Power MOSFETs
        STMicroelectronics' 80 V MOSFETs with DeepGATE process integration result a more efficient and denser design in applications such as motor control and DC/DC converters.
      • ESDA8P30-1T2 TVS Diode
        ESDA8P30-1T2 TVS Diode
        STMicroelectronics' ESDA8P30-1T2 unidirectional, single-line TVS diode provides USB VBUS, power supply, and battery protection.
      • CLOUD-ST25TA02KB Evaluation Board
        CLOUD-ST25TA02KB Evaluation Board
        STMicroelectronics' CLOUD-ST25TA02KB evaluation board for the ST25TA02KB-P device can be configured for various uses such as indicating field detection.
      More Newest Products
      Top