TGF2957

Mfr. #:: TGF2957
制造商:: Qorvo
描述:: RF JFET Transistors DC-12GHz 70W 32V GaN P3dB @ 3GHz 48.6dBm
生命周期:: 制造商新产品。
数据表:: TGF2957 数据表
交货:: DHL FedEx Ups TNT EMS
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ECAD Model:
更多信息:: TGF2957 更多信息

产品属性
属性值

制造商: TriQuint (Qorvo)

产品分类: 晶体管 - FET、MOSFET - 单

打包: 胡扯

部分别名: 1112250

安装方式: 贴片/贴片

工作温度范围: - 65 C to + 150 C

包装盒: 死

技术: 氮化镓碳化硅

配置: 单身的

晶体管型: HEMT

获得: 19.2 dB

输出功率: 48.6 dBm

钯功耗: 68 W

最高工作温度: + 150 C

最低工作温度: - 65

工作频率: 15 GHz

Id 连续漏极电流: 4.2 A

Vds-漏-源-击穿电压: 32 V

晶体管极性: N通道

最大漏栅电压: 100 V

Tags: TGF295, TGF29, TGF2, TGF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

TGF2957 更多信息

TGF GaN on SiC Transistors: Qorvo TGF GaN on SiC Transistors for the Satellite, P to P, and Military communications along with Marine radar and Test and instrumentation. These are small footprint (dies) that handle high power (7W to 70W) and high frequency, up to 14GHz.

QPD GaN RF Transistors: Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.

Market price

型号	制造商	描述	库存	价格
1112250 DISTI # TGF2957	Qorvo	RF POWER TRANSISTOR RoHS: Compliant	0	1:$9.5500

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