TGF2977-SM

TGF2977-SM
Mfr. #:
TGF2977-SM
制造商:
Qorvo
描述:
RF JFET Transistors 8-12GHz 5W GaN PAE 50% Gain 13dB
生命周期:
制造商新产品。
数据表:
TGF2977-SM 数据表
交货:
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支付:
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ECAD Model:
更多信息:
TGF2977-SM 更多信息
产品属性
属性值
制造商
TriQuint (Qorvo)
产品分类
晶体管 - FET、MOSFET - 单
打包
托盘
部分别名
1127257
单位重量
0.002014 oz
安装方式
贴片/贴片
包装盒
QFN-16
技术
氮化镓碳化硅
配置
单身的
晶体管型
HEMT
获得
13 dB
输出功率
6 W
钯功耗
8.4 W
最高工作温度
+ 225 C
工作频率
DC to 12 GHz
Id 连续漏极电流
326 mA
Vds-漏-源-击穿电压
32 V
晶体管极性
N通道
开发套件
TGF2977-SMEVB1
VGS-栅极-源极击穿电压
- 2.7 V
Tags
TGF297, TGF29, TGF2, TGF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
TGF297x GaN RF Transistor
Qorvo TGF297x GaN RF Transistors have a frequency range of DC to 12GHz. The TGF2970 transistors offer output power from 6W up to 22W. The TGF2970 transistors are constructed using a TQGaN25 process, which features field plate techniques to optimize power and efficiency at high drain bias operation. Learn More
型号 制造商 描述 库存 价格
TGF2977-SM
DISTI # 772-TGF2977-SM
QorvoRF JFET Transistors 8-12GHz 5W GaN PAE 50% Gain 13dB
RoHS: Compliant
266
  • 1:$24.1500
  • 25:$20.8900
  • 100:$18.0700
  • 250:$16.8000
  • 500:$15.6200
TGF2977-SM-EVB
DISTI # 772-TGF2977-SM-EVB
QorvoRF Development Tools
RoHS: Compliant
0
  • 1:$875.0000
图片 型号 描述
TGF2977-SM

Mfr.#: TGF2977-SM

OMO.#: OMO-TGF2977-SM

RF JFET Transistors 8-12GHz 5W GaN PAE 50% Gain 13dB
TGF2929-FS

Mfr.#: TGF2929-FS

OMO.#: OMO-TGF2929-FS

RF MOSFET Transistors DC-3.5GHz 100W 28V GaN
TGF2953

Mfr.#: TGF2953

OMO.#: OMO-TGF2953-318

RF JFET Transistors DC-12GHz 12W 32V GaN P3dB @ 3GHz 41.2dBm
TGF2929-FL

Mfr.#: TGF2929-FL

OMO.#: OMO-TGF2929-FL-319

RF MOSFET Transistors DC-3.5GHz 100W 28V GaN
TGF2929-FS/FL, 3.1-3.5GHZ EVB

Mfr.#: TGF2929-FS/FL, 3.1-3.5GHZ EVB

OMO.#: OMO-TGF2929-FS-FL-3-1-3-5GHZ-EVB-319

RF MOSFET Transistors DC-3.5GHz 100W Eval Board
TGF2965-SM-EVB

Mfr.#: TGF2965-SM-EVB

OMO.#: OMO-TGF2965-SM-EVB-1152

RF Development Tools
TGF2942

Mfr.#: TGF2942

OMO.#: OMO-TGF2942-1152

RF JFET Transistors DC-25GHz 2Watt NF 1.2dB GaN
TGF2961

Mfr.#: TGF2961

OMO.#: OMO-TGF2961-1190

全新原装
TGF2961-SD

Mfr.#: TGF2961-SD

OMO.#: OMO-TGF2961-SD-1190

全新原装
TGF2961-SD T/R

Mfr.#: TGF2961-SD T/R

OMO.#: OMO-TGF2961-SD-T-R-1190

全新原装
可用性
库存:
Available
订购:
1500
输入数量:
TGF2977-SM的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$23.43
US$23.43
10
US$22.26
US$222.58
100
US$21.09
US$2 108.70
500
US$19.92
US$9 957.75
1000
US$18.74
US$18 744.00
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