QPD1013SR

Mfr. #:: QPD1013SR
制造商:: Qorvo
描述:: RF JFET Transistors DC-2.7GHz 150W PAE 64.8%
生命周期:: 制造商新产品。
数据表:: QPD1013SR 数据表
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更多信息:: QPD1013SR 更多信息

产品属性
属性值

制造商：: 科沃

产品分类：: 射频 JFET 晶体管

RoHS：: Y

晶体管类型：: HEMT

技术：: 氮化镓碳化硅

获得：: 21.8 dB

晶体管极性：: N通道

Id - 连续漏极电流：: 1.7 A

输出功率：: 178 W

最大漏栅电压：: 65 V

最低工作温度：: - 40 C

最高工作温度：: + 85 C

Pd - 功耗：: 67 W

安装方式：: 贴片/贴片

包装/案例：: DFN-6

打包：: 卷轴

应用：: 军用雷达、干扰器、测试仪器、宽带或窄带放大器、陆地移动和军用

配置：: 单三重排水

工作频率：: 1.2 GHz to 2.7 GHz

品牌：: 科沃

开发套件：: QPD1013EVB01

湿气敏感：: 是的

产品类别：: 射频 JFET 晶体管

出厂包装数量：: 100

子类别：: 晶体管

Tags: QPD101, QPD10, QPD1, QPD

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

QPD1013SR 描述

***et: GaN RF Transistor 2.7GHz 65V 150W 6-Pin QFN T/R

***el Electronic: RF JFET Transistors DC-2.7GHz 150W PAE 64.8%

QPD1013SR 更多信息

QPD1013 GaN RF Transistor: Qorvo QPD1013 GaN RF Transistor is a high power and wide bandwidth High Electron Mobility Transistor (HEMT) which operates from DC to 2.7GHz. This single stage unmatched power transistor is a 150W discrete GaN on SiC device. The QPD1013 RF transistor features an over-molded plastic package and is suitable for numerous applications such as military radar, land mobile, and military radio communications.

QPD GaN RF Transistors: Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.

GaN Transistor Solutions for Sub 6GHz 5G: Qorvo GaN Transistor Solutions for Sub 6GHz 5G are a broad portfolio of gallium nitride (GaN) discrete transistor products. The devices have varying levels of power, voltage, and frequency ratings in die-level and packaged solutions. These products provide high GaN performance plus the convenience of industry-standard packaging. This speeds design, manufacturing, and is backed by industry-leading reliability.

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