CSD19536KCS

Mfr. #:: CSD19536KCS
描述:: MOSFET N-CH 100V TO-220
生命周期:: 制造商新产品。
数据表:: CSD19536KCS 数据表
交货:: DHL FedEx Ups TNT EMS
支付:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:: CSD19536KCS 更多信息 CSD19536KCS Product Details

产品属性
属性值

制造商: TI

产品分类: FET - 单

系列: 场效应管

打包: 管子

单位重量: 0.211644 oz

安装方式: 通孔

商品名: 场效应管

包装盒: TO-220-3

技术: 硅

工作温度: -55°C ~ 175°C (TJ)

安装型: 通孔

通道数: 1 Channel

供应商-设备-包: TO-220-3

配置: 单身的

FET型: MOSFET N 沟道，金属氧化物

最大功率: 375W

晶体管型: 1 N-Channel

漏源电压 Vdss: 100V

输入电容-Ciss-Vds: 12000pF @ 50V

FET-Feature: 标准

Current-Continuous-Drain-Id-25°C: 150A (Ta)

Rds-On-Max-Id-Vgs: 2.7 mOhm @ 100A, 10V

Vgs-th-Max-Id: 3.2V @ 250μA

栅极电荷-Qg-Vgs: 153nC @ 10V

钯功耗: 375 W

最高工作温度: + 175 C

最低工作温度: - 55 C

秋季时间: 5 ns

上升时间: 8 ns

VGS-栅极-源极-电压: 20 V

Id 连续漏极电流: 259 A

Vds-漏-源-击穿电压: 100 V

VGS-th-Gate-Source-Threshold-Voltage: 2.5 V

Rds-On-Drain-Source-Resistance: 2.5 mOhms

晶体管极性: N通道

Qg-门电荷: 118 nC

正向跨导最小值: 307 S

Tags: CSD19536K, CSD19536, CSD1953, CSD19, CSD1, CSD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CSD19536KCS 更多信息

NexFET N-Channel Power MOSFETs: OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.

TI N-Channel 8-23-12

NexFET™ Power MOSFETs: OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

Market price

型号	描述	库存	价格
CSD19536KCS DISTI # 296-37289-5-ND	MOSFET N-CH 100V TO-220 RoHS: Compliant Min Qty: 1 Container: Tube	1898In Stock	1000:$2.5395 500:$3.0111 100:$3.7185 50:$4.0812 10:$4.5350 1:$5.0800
CSD19536KCS DISTI # CSD19536KCS	Trans MOSFET N-CH 100V 150A 3-Pin TO-220 - Rail/Tube (Alt: CSD19536KCS) RoHS: Compliant Min Qty: 1 Container: Tube	Americas - 5	1:$2.1900 10:$2.0900 25:$2.0900 50:$1.9900 100:$1.9900 500:$1.8900 1000:$1.8900
CSD19536KCS DISTI # CSD19536KCS	Trans MOSFET N-CH 100V 150A 3-Pin TO-220 (Alt: CSD19536KCS) RoHS: Compliant Min Qty: 200	Asia - 0
CSD19536KCS DISTI # 71AC2915		0	1:$4.3700 10:$3.9300 25:$3.6900 50:$3.4500 100:$3.2100 250:$3.0100 500:$2.7300
CSD19536KCS DISTI # 38X4675	MOSFET, N CHANNEL, 100V, 150A, TO-220-3,Transistor Polarity:N Channel,Continuous Drain Current Id:150A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0023ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.5V,MSL:-, RoHS Compliant: Yes	678	1:$4.3700 10:$3.9300 25:$3.6900 50:$3.4500 100:$3.2100 250:$3.0100 500:$2.7300
CSD19536KCS	100V, N-Channel NexFET&#153,Power MOSFET	3959	1000:$1.8700 750:$1.9100 500:$2.2100 250:$2.5400 100:$2.7200 25:$3.0300 10:$3.2500 1:$3.6100
CSD19536KCS DISTI # 595-CSD19536KCS	MOSFET 100V N-CH NexFET Pwr MOSFET RoHS: Compliant	61	1:$4.3700 10:$3.9300 100:$3.2100 250:$3.0100 500:$2.7300
CSD19536KCS DISTI # 8274919	MOSFET N-CHANNEL 100V 259A NEXFET TO-220, PK	96	2:£3.3800 26:£2.8400
CSD19536KCS DISTI # 8274919P	MOSFET N-CHANNEL 100V 259A NEXFET TO-220, TU	108	26:£2.8400
CSD19536KCS DISTI # 2419498	MOSFET, N CHANNEL, 100V, 150A, TO-220-3 RoHS: Compliant	678	1:£3.6900 10:£2.9700 100:£2.4400 250:£2.2900 500:£2.0700
CSD19536KCS DISTI # 2419498	MOSFET, N CHANNEL, 100V, 150A, TO-220-3 RoHS: Compliant	678	1:$6.9200 10:$6.2200 100:$5.1000 250:$4.7800 500:$4.3400 1000:$3.6600

图片	型号	描述
	Mfr.#: CSD19537Q3T OMO.#: OMO-CSD19537Q3T	MOSFET 100V, N ch NexFET MOSFETG , single SON3x3, 14.5mOhm 8-VSON-CLIP -55 to 150
	Mfr.#: CSD19538Q2 OMO.#: OMO-CSD19538Q2	MOSFET 100V, N ch NexFET MOSFETG , single SON2x2, 59mOhm 6-WSON -55 to 150
	Mfr.#: CSD19502Q5BT OMO.#: OMO-CSD19502Q5BT	MOSFET N-Channel, 3.4mOhm 80V
	Mfr.#: CSD19533Q5A OMO.#: OMO-CSD19533Q5A	MOSFET 100V 7.8mOhm N-CH Pwr MOSFET
	Mfr.#: CSD19506KCS OMO.#: OMO-CSD19506KCS	MOSFET 80V N-CH Power MOSFET
	Mfr.#: CSD19505KTTT OMO.#: OMO-CSD19505KTTT	MOSFET 80V, N ch NexFET MOSFETG , single D2PAK, 3.1mOhm 3-DDPAK/TO-263 -55 to 175
	Mfr.#: CSD19533Q5AQ OMO.#: OMO-CSD19533Q5AQ-TEXAS-INSTRUMENTS	全新原装
	Mfr.#: CSD19506KTTT OMO.#: OMO-CSD19506KTTT-TEXAS-INSTRUMENTS	IC MOSFET N-CH 80V TO-220
	Mfr.#: CSD19505KTT OMO.#: OMO-CSD19505KTT-TEXAS-INSTRUMENTS	MOSFET N-CH 80V 200A DDPAK-3
	Mfr.#: CSD19538Q3A OMO.#: OMO-CSD19538Q3A-TEXAS-INSTRUMENTS	MOSFET N-CH 100V 15A VSONP

CSD19536KCS

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes