BSC080N03MS G

BSC080N03MS G
Mfr. #:
BSC080N03MS G
制造商:
Infineon Technologies
描述:
Trans MOSFET N-CH 30V 13A 8-Pin TDSON T/R (Alt: BSC080N03MS G)
生命周期:
制造商新产品。
数据表:
BSC080N03MS G 数据表
交货:
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ECAD Model:
更多信息:
BSC080N03MS G 更多信息
产品属性
属性值
制造商
I
产品分类
FET - 单
系列
OptiMOS 3M
打包
卷轴
部分别名
BSC080N03MSGATMA1 BSC080N03MSGXT SP000311514
安装方式
贴片/贴片
商品名
优化MOS
包装盒
TDSON-8
技术
通道数
1 Channel
配置
单四漏三源
晶体管型
1 N-Channel
钯功耗
2.5 W
最高工作温度
+ 150 C
最低工作温度
- 55 C
秋季时间
5.6 ns
上升时间
5.4 ns
VGS-栅极-源极-电压
20 V
Id 连续漏极电流
13 A
Vds-漏-源-击穿电压
30 V
Rds-On-Drain-Source-Resistance
8 mOhms
晶体管极性
N通道
典型关断延迟时间
10 ns
典型开启延迟时间
10 ns
通道模式
增强
Tags
BSC080N03M, BSC080N, BSC080, BSC08, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
型号 制造商 描述 库存 价格
BSC080N03MSGATMA1
DISTI # V72:2272_06390943
Infineon Technologies AGTrans MOSFET N-CH 30V 13A 8-Pin TDSON EP T/R
RoHS: Compliant
5000
  • 3000:$0.2529
  • 1000:$0.2728
  • 500:$0.3105
  • 250:$0.3369
  • 100:$0.3609
  • 25:$0.4357
  • 10:$0.4454
  • 1:$0.5234
BSC080N03MSGATMA1
DISTI # BSC080N03MSGATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 30V 53A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
779In Stock
  • 1000:$0.3287
  • 500:$0.4108
  • 100:$0.5546
  • 10:$0.7190
  • 1:$0.8200
BSC080N03MSGATMA1
DISTI # BSC080N03MSGATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 30V 53A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
779In Stock
  • 1000:$0.3287
  • 500:$0.4108
  • 100:$0.5546
  • 10:$0.7190
  • 1:$0.8200
BSC080N03MSGATMA1
DISTI # BSC080N03MSGATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 30V 53A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
On Order
  • 5000:$0.2692
BSC080N03MSGATMA1
DISTI # 31084156
Infineon Technologies AGTrans MOSFET N-CH 30V 13A 8-Pin TDSON EP T/R
RoHS: Compliant
5000
  • 3000:$0.2544
  • 1000:$0.2745
  • 500:$0.3114
  • 250:$0.3342
  • 100:$0.3579
  • 32:$0.4327
BSC080N03MS G
DISTI # BSC080N03MS G
Infineon Technologies AGTrans MOSFET N-CH 30V 13A 8-Pin TDSON T/R (Alt: BSC080N03MS G)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel
Asia - 0
    BSC080N03MSGATMA1
    DISTI # BSC080N03MSGATMA1
    Infineon Technologies AGTrans MOSFET N-CH 30V 13A 8-Pin TDSON EP - Tape and Reel (Alt: BSC080N03MSGATMA1)
    RoHS: Compliant
    Min Qty: 5000
    Container: Reel
    Americas - 0
    • 5000:$0.2079
    • 10000:$0.2009
    • 20000:$0.1939
    • 30000:$0.1869
    • 50000:$0.1839
    BSC080N03MSGATMA1
    DISTI # 60R2503
    Infineon Technologies AGMOSFET, N CHANNEL, 30V, 53A, PG-TSDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:53A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0067ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V RoHS Compliant: Yes0
      BSC080N03MSGInfineon Technologies AGPower Field-Effect Transistor, 13A I(D), 30V, 0.0102ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
      RoHS: Compliant
      9791
      • 1000:$0.2400
      • 500:$0.2500
      • 100:$0.2600
      • 25:$0.2700
      • 1:$0.2900
      BSC080N03MSGATMA1Infineon Technologies AGPower Field-Effect Transistor, 13A I(D), 30V, 0.0102ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
      RoHS: Compliant
      5000
      • 1000:$0.2200
      • 500:$0.2400
      • 100:$0.2500
      • 25:$0.2600
      • 1:$0.2800
      BSC080N03MS G
      DISTI # 726-BSC080N03MSG
      Infineon Technologies AGMOSFET N-Ch 30V 53A TDSON-8 OptiMOS 3M
      RoHS: Compliant
      0
      • 1:$0.6800
      • 10:$0.5620
      • 100:$0.3630
      • 1000:$0.2910
      BSC080N03MSGATMA1
      DISTI # 7545288P
      Infineon Technologies AGMOSFET N-CHANNEL 30V 13A OPTIMOS3 TDSON8, RL1620
      • 25:£0.1560
      BSC080N03MSGATMA1
      DISTI # BSC080N03MSGATMA1
      Infineon Technologies AGTransistor: N-MOSFET,unipolar,30V,53A,35W,PG-TDSON-8550
      • 3:$0.4264
      • 25:$0.3763
      • 100:$0.3156
      • 250:$0.2732
      • 1000:$0.2537
      BSC080N03MSGInfineon Technologies AG 114
        BSC080N03MSGATMA1
        DISTI # C1S322000595914
        Infineon Technologies AGMOSFETs
        RoHS: Compliant
        5000
        • 250:$0.3443
        • 100:$0.3708
        • 25:$0.4437
        • 10:$0.4539
        BSC080N03MSGATMA1
        DISTI # 1775456
        Infineon Technologies AGMOSFET, N CH, 53A, 30V, PG-TDSON-8
        RoHS: Compliant
        0
        • 1:$1.0800
        • 10:$0.8900
        • 100:$0.5750
        • 1000:$0.4610
        • 5000:$0.3900
        BSC080N03MSGInfineon Technologies AG30V,8m,53A,N-Channel Power MOSFET100
        • 1:$0.4200
        • 100:$0.3500
        • 500:$0.3100
        • 1000:$0.3000
        图片 型号 描述
        BSC080N03LS

        Mfr.#: BSC080N03LS

        OMO.#: OMO-BSC080N03LS-1190

        全新原装
        BSC080N03LS G

        Mfr.#: BSC080N03LS G

        OMO.#: OMO-BSC080N03LS-G-1190

        Trans MOSFET N-CH 30V 14A 8-Pin TDSON T/R (Alt: BSC080N03LS G)
        BSC080N03LSG

        Mfr.#: BSC080N03LSG

        OMO.#: OMO-BSC080N03LSG-1190

        14 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET
        BSC080N03MS G

        Mfr.#: BSC080N03MS G

        OMO.#: OMO-BSC080N03MS-G-1190

        Trans MOSFET N-CH 30V 13A 8-Pin TDSON T/R (Alt: BSC080N03MS G)
        BSC080N03MSGATMA1

        Mfr.#: BSC080N03MSGATMA1

        OMO.#: OMO-BSC080N03MSGATMA1-INFINEON-TECHNOLOGIES

        MOSFET N-CH 30V 53A TDSON-8
        BSC080N03NMS

        Mfr.#: BSC080N03NMS

        OMO.#: OMO-BSC080N03NMS-1190

        全新原装
        BSC080P03LS

        Mfr.#: BSC080P03LS

        OMO.#: OMO-BSC080P03LS-1190

        Power Field-Effect Transistor, 16A I(D), 30V, 0.008ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
        BSC080P03LS G

        Mfr.#: BSC080P03LS G

        OMO.#: OMO-BSC080P03LS-G-1190

        MOSFET P-Ch -30V 16A TDSON-8 OptiMOS P
        BSC080P03LSG

        Mfr.#: BSC080P03LSG

        OMO.#: OMO-BSC080P03LSG-1190

        Trans MOSFET P-CH 30V 16A 8-Pin TDSON T/R (Alt: BSC080P03LS G)
        BSC080P03LSGAUMA1

        Mfr.#: BSC080P03LSGAUMA1

        OMO.#: OMO-BSC080P03LSGAUMA1-INFINEON-TECHNOLOGIES

        MOSFET P-CH 30V 30A TDSON-8
        可用性
        库存:
        Available
        订购:
        4000
        输入数量:
        BSC080N03MS G的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
        参考价格(美元)
        数量
        单价
        小计金额
        1
        US$0.44
        US$0.44
        10
        US$0.41
        US$4.15
        100
        US$0.39
        US$39.29
        500
        US$0.37
        US$185.50
        1000
        US$0.35
        US$349.20
        从...开始
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