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BSC080N03LS G

BSC080N03LS G
Mfr. #:
BSC080N03LS G
制造商:
INFINEON
描述:
Trans MOSFET N-CH 30V 14A 8-Pin TDSON T/R (Alt: BSC080N03LS G)
生命周期:
制造商新产品。
数据表:
BSC080N03LS G 数据表
交货:
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支付:
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ECAD Model:
产品属性
属性值
制造商
英飞凌
产品分类
FET - 单
系列
OptiMOS 3
打包
卷轴
部分别名
BSC080N03LSGATMA1 BSC080N03LSGXT SP000275114
安装方式
贴片/贴片
商品名
优化MOS
包装盒
TDSON-8
技术
硅
通道数
1 Channel
配置
单四漏三源
晶体管型
1 N-Channel
钯功耗
2.5 W
最高工作温度
+ 150 C
最低工作温度
- 55 C
秋季时间
2.6 ns
上升时间
2.8 ns
VGS-栅极-源极-电压
20 V
Id 连续漏极电流
14 A
Vds-漏-源-击穿电压
30 V
Rds-On-Drain-Source-Resistance
8 mOhms
晶体管极性
N通道
典型关断延迟时间
15 ns
典型开启延迟时间
3.3 ns
通道模式
增强
Tags
BSC080N03LSG, BSC080N03L, BSC080N, BSC080, BSC08, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
型号 制造商 描述 库存 价格
BSC080N03LSGATMA1
DISTI # V72:2272_06390942		Infineon Technologies AGTrans MOSFET N-CH 30V 14A 8-Pin TDSON EP T/R
RoHS: Compliant		3336
  • 3000:$0.1889
  • 1000:$0.2227
  • 500:$0.2475
  • 250:$0.2750
  • 100:$0.3055
  • 25:$0.4363
  • 10:$0.4418
  • 1:$0.5104
BSC080N03LSGATMA1
DISTI # BSC080N03LSGATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 30V 53A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		On Order
  • 5000:$0.2692
BSC080N03LSGATMA1
DISTI # BSC080N03LSGATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 30V 53A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.3287
  • 500:$0.4108
  • 100:$0.5546
  • 10:$0.7190
  • 1:$0.8200
BSC080N03LSGATMA1
DISTI # BSC080N03LSGATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 30V 53A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.3287
  • 500:$0.4108
  • 100:$0.5546
  • 10:$0.7190
  • 1:$0.8200
BSC080N03LSGATMA1
DISTI # 31003332		Infineon Technologies AGTrans MOSFET N-CH 30V 14A 8-Pin TDSON EP T/R
RoHS: Compliant		3336
  • 3000:$0.1889
  • 1000:$0.2525
  • 500:$0.3043
  • 250:$0.3076
  • 100:$0.3111
  • 32:$0.4363
BSC080N03LS G
DISTI # BSC080N03LS G		Infineon Technologies AGTrans MOSFET N-CH 30V 14A 8-Pin TDSON T/R (Alt: BSC080N03LS G)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Asia - 0
    BSC080N03LSGATMA1
    DISTI # BSC080N03LSGATMA1    		Infineon Technologies AGTrans MOSFET N-CH 30V 14A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC080N03LSGATMA1)
    RoHS: Compliant
    Min Qty: 5000
    Container: Reel    		Americas - 0
    • 5000:$0.2399
    • 10000:$0.2389
    • 20000:$0.2379
    • 30000:$0.2379
    • 50000:$0.2369
    BSC080N03LS G
    DISTI # 60R2502    		Infineon Technologies AGMOSFET, N CHANNEL, 30V, 53A, PG-TSDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:53A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0067ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.2V RoHS Compliant: Yes0
      BSC080N03LSGATMA1
      DISTI # 50Y1805      		Infineon Technologies AGMOSFET Transistor, N Channel, 53 A, 30 V, 0.0067 ohm, 10 V, 2.2 V RoHS Compliant: Yes439
      • 1:$0.6500
      • 10:$0.5400
      • 25:$0.4760
      • 50:$0.4120
      • 100:$0.3480
      • 250:$0.3250
      • 500:$0.3020
      • 1000:$0.2790
      BSC080N03LSGATMA1Infineon Technologies AGPower Field-Effect Transistor, 14A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
      RoHS: Compliant      		4500
      • 1000:$0.2200
      • 500:$0.2400
      • 100:$0.2500
      • 25:$0.2600
      • 1:$0.2800
      BSC080N03LS G
      DISTI # 726-BSC080N03LSG      		Infineon Technologies AGMOSFET N-Ch 30V 53A TDSON-8 OptiMOS 3
      RoHS: Compliant      		4403
      • 1:$0.6500
      • 10:$0.5400
      • 100:$0.3480
      • 1000:$0.2790
      BSC080N03LSGATMA1
      DISTI # 726-BSC080N03LSGATMA      		Infineon Technologies AGMOSFET N-Ch 30V 53A TDSON-8 OptiMOS 3
      RoHS: Compliant      		6236
      • 1:$0.6800
      • 10:$0.5620
      • 100:$0.3630
      • 1000:$0.2910
      BSC080N03LSGInfineon Technologies AG14 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET8
      • 6:$0.8000
      • 1:$1.0000
      BSC080N03LSGATMA1
      DISTI # 7528160P      		Infineon Technologies AGMOSFET N-CHANNEL 30V 14A OPTIMOS3 TDSON8, RL1910
      • 125:£0.4140
      • 500:£0.3780
      • 1250:£0.3520
      • 5000:£0.3280
      BSC080N03LSGInfineon Technologies AG 10
      • 7:$0.7500
      BSC080N03LSGATMA1
      DISTI # BSC080N03LSGATMA1      		Infineon Technologies AGTransistor: N-MOSFET,unipolar,30V,43A,35W,PG-TDSON-82937
      • 1:$0.6297
      • 3:$0.3763
      • 10:$0.3168
      • 100:$0.2835
      • 1000:$0.2548
      BSC080N03LSGInfineon Technologies AG 3148
        BSC080N03LSGATMA1
        DISTI # 2480740        		Infineon Technologies AGMOSFET, N-CH, 30V, 53A, TDSON-8
        RoHS: Compliant        		439
        • 1:$1.0300
        • 10:$0.8550
        • 100:$0.5510
        • 1000:$0.4410
        • 5000:$0.3900
        BSC080N03LS G
        DISTI # 1775454        		Infineon Technologies AGMOSFET, N CH, 100A, 30V, PG-TDSON-8
        RoHS: Compliant        		4401
        • 1:$1.0300
        • 10:$0.8550
        • 100:$0.5510
        • 1000:$0.4850
        BSC080N03LSGATMA1
        DISTI # 2480740RL        		Infineon Technologies AGMOSFET, N-CH, 30V, 53A, TDSON-8
        RoHS: Compliant        		0
        • 1:$1.0300
        • 10:$0.8550
        • 100:$0.5510
        • 1000:$0.4410
        • 5000:$0.3900
        BSC080N03LSGInfineon Technologies AG30V,52A,N Channel Power MOSFET2400
        • 1:$0.4200
        • 100:$0.3500
        • 500:$0.3100
        • 1000:$0.3000
        BSC080N03LS G
        DISTI # 1775454        		Infineon Technologies AGMOSFET, N CH, 100A, 30V, PG-TDSON-8
        RoHS: Compliant        		4619
        • 5:£0.2180
        • 25:£0.2170
        • 100:£0.2160
        • 250:£0.2150
        • 500:£0.2140
        BSC080N03LSGATMA1
        DISTI # 2480740        		Infineon Technologies AGMOSFET, N-CH, 30V, 53A, TDSON-8
        RoHS: Compliant        		699
        • 5:£0.4850
        • 25:£0.4260
        • 100:£0.2640
        • 250:£0.2460
        • 500:£0.2290
        BSC080N03LSGATMA1
        DISTI # C1S322000207143        		Infineon Technologies AGTrans MOSFET N-CH 30V 14A 8-Pin TDSON EP T/R
        RoHS: Compliant        		3336
        • 250:$0.3078
        • 100:$0.3111
        • 25:$0.4365
        • 10:$0.4419
        图片 型号 描述
        BSC080N03MS G

        Mfr.#: BSC080N03MS G

        OMO.#: OMO-BSC080N03MS-G

        		 MOSFET N-Ch 30V 53A TDSON-8 OptiMOS 3M
        BSC080N03MSGATMA1

        Mfr.#: BSC080N03MSGATMA1

        OMO.#: OMO-BSC080N03MSGATMA1

        		 MOSFET LV POWER MOS
        BSC080N03LS G

        Mfr.#: BSC080N03LS G

        OMO.#: OMO-BSC080N03LS-G-1190

        		 Trans MOSFET N-CH 30V 14A 8-Pin TDSON T/R (Alt: BSC080N03LS G)
        BSC080N03LSGATMA1

        Mfr.#: BSC080N03LSGATMA1

        OMO.#: OMO-BSC080N03LSGATMA1-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 30V 53A TDSON-8
        BSC080N03MS G

        Mfr.#: BSC080N03MS G

        OMO.#: OMO-BSC080N03MS-G-1190

        		 Trans MOSFET N-CH 30V 13A 8-Pin TDSON T/R (Alt: BSC080N03MS G)
        BSC080N03MSG

        Mfr.#: BSC080N03MSG

        OMO.#: OMO-BSC080N03MSG-1190

        		 Power Field-Effect Transistor, 13A I(D), 30V, 0.0102ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
        BSC080N03MSGATMA1

        Mfr.#: BSC080N03MSGATMA1

        OMO.#: OMO-BSC080N03MSGATMA1-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 30V 53A TDSON-8
        BSC080N03NMS

        Mfr.#: BSC080N03NMS

        OMO.#: OMO-BSC080N03NMS-1190

        		 全新原装
        BSC080P03LS

        Mfr.#: BSC080P03LS

        OMO.#: OMO-BSC080P03LS-1190

        		 Power Field-Effect Transistor, 16A I(D), 30V, 0.008ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
        BSC080P03LSGAUMA1 , TDK5

        Mfr.#: BSC080P03LSGAUMA1 , TDK5

        OMO.#: OMO-BSC080P03LSGAUMA1-TDK5-1190

        		 全新原装
        可用性
        库存:
        Available
        订购:
        1000
        输入数量:
        BSC080N03LS G的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
        参考价格（美元）
        数量
        单价
        小计金额
        1
        US$0.42
        US$0.42
        10
        US$0.40
        US$3.98
        100
        US$0.38
        US$37.67
        500
        US$0.36
        US$177.85
        1000
        US$0.33
        US$334.80
        由于2021年半导体供不应求，低于2021年之前的正常价格，请发询价确认。
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