 | |  | |
| PartNumber | BSC080N03MS G | BSC080N03MSGATMA1 | BSC080N03MSG |
| Description | MOSFET N-Ch 30V 53A TDSON-8 OptiMOS 3M | MOSFET LV POWER MOS | Power Field-Effect Transistor, 13A I(D), 30V, 0.0102ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
| Manufacturer | Infineon | Infineon | INF |
| Product Category | MOSFET | MOSFET | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TDSON-8 | TDSON-8 | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 13 A | - | - |
| Rds On Drain Source Resistance | 8 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 2.5 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Reel | Reel | - |
| Height | 1.27 mm | 1.27 mm | - |
| Length | 5.9 mm | 5.9 mm | - |
| Series | OptiMOS 3 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 5.15 mm | 5.15 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Fall Time | 5.6 ns | - | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 5.4 ns | - | - |
| Factory Pack Quantity | 5000 | - | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 10 ns | - | - |
| Typical Turn On Delay Time | 10 ns | - | - |
| Part # Aliases | BSC080N03MSGATMA1 BSC8N3MSGXT SP000311514 | BSC080N03MS BSC8N3MSGXT G SP000311514 | - |
| Unit Weight | 0.006349 oz | - | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
BSC080N03MS G | MOSFET N-Ch 30V 53A TDSON-8 OptiMOS 3M | |
| BSC080N03MSGATMA1 | MOSFET N-CH 30V 53A TDSON-8 | ||
Infineon Technologies |
BSC080N03MSGATMA1 | MOSFET LV POWER MOS | |
| BSC080N03MS G | Trans MOSFET N-CH 30V 13A 8-Pin TDSON T/R (Alt: BSC080N03MS G) | ||
| BSC080N03MSG | Power Field-Effect Transistor, 13A I(D), 30V, 0.0102ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |