BSC080N03MSGATMA1

Mfr. #:: BSC080N03MSGATMA1
制造商:: Infineon Technologies
描述:: MOSFET LV POWER MOS
生命周期:: 制造商新产品。
数据表:: BSC080N03MSGATMA1 数据表
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产品属性
属性值

制造商：: 英飞凌

产品分类：: MOSFET

技术：: 硅

安装方式：: 贴片/贴片

包装/案例：: TDSON-8

商品名：: 优化MOS

打包：: 卷轴

高度：: 1.27 mm

长度：: 5.9 mm

宽度：: 5.15 mm

品牌：: 英飞凌科技

产品类别：: MOSFET

子类别：: MOSFET

第 # 部分别名：: BSC080N03MS BSC8N3MSGXT G SP000311514

Tags: BSC080N03M, BSC080N, BSC080, BSC08, BSC0, BSC

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSC080N03MSGATMA1 描述

***ure Electronics: Single N-Channel 30 V 8 mOhm 21 nC OptiMOS Power Mosfet - TDSON-8

***ment14 APAC: MOSFET, N CH, 53A, 30V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:53A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6.7mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:35W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:53A; Power Dissipation Pd:35W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***ineon SCT: Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TDSON-8, RoHS

***ineon: With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED

Market price

型号	制造商	描述	库存	价格
BSC080N03MSGATMA1 DISTI # V72:2272_06390943	Infineon Technologies AG	Trans MOSFET N-CH 30V 13A 8-Pin TDSON EP T/R RoHS: Compliant	5000	3000:$0.2529 1000:$0.2728 500:$0.3105 250:$0.3369 100:$0.3609 25:$0.4357 10:$0.4454 1:$0.5234
BSC080N03MSGATMA1 DISTI # BSC080N03MSGATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 30V 53A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	779In Stock	1000:$0.3287 500:$0.4108 100:$0.5546 10:$0.7190 1:$0.8200
BSC080N03MSGATMA1 DISTI # BSC080N03MSGATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 30V 53A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	779In Stock	1000:$0.3287 500:$0.4108 100:$0.5546 10:$0.7190 1:$0.8200
BSC080N03MSGATMA1 DISTI # BSC080N03MSGATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 30V 53A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	On Order	5000:$0.2692
BSC080N03MSGATMA1 DISTI # 31084156	Infineon Technologies AG	Trans MOSFET N-CH 30V 13A 8-Pin TDSON EP T/R RoHS: Compliant	5000	3000:$0.2544 1000:$0.2745 500:$0.3114 250:$0.3342 100:$0.3579 32:$0.4327
BSC080N03MSGATMA1 DISTI # BSC080N03MSGATMA1	Infineon Technologies AG	Trans MOSFET N-CH 30V 13A 8-Pin TDSON EP - Tape and Reel (Alt: BSC080N03MSGATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	5000:$0.2079 10000:$0.2009 20000:$0.1939 30000:$0.1869 50000:$0.1839
BSC080N03MSGATMA1 DISTI # 60R2503	Infineon Technologies AG	MOSFET, N CHANNEL, 30V, 53A, PG-TSDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:53A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0067ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V RoHS Compliant: Yes	0
BSC080N03MSGATMA1	Infineon Technologies AG	Power Field-Effect Transistor, 13A I(D), 30V, 0.0102ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	5000	1000:$0.2200 500:$0.2400 100:$0.2500 25:$0.2600 1:$0.2800
BSC080N03MS G DISTI # 726-BSC080N03MSG	Infineon Technologies AG	MOSFET N-Ch 30V 53A TDSON-8 OptiMOS 3M RoHS: Compliant	0	1:$0.6800 10:$0.5620 100:$0.3630 1000:$0.2910
BSC080N03MSGATMA1 DISTI # 7545288P	Infineon Technologies AG	MOSFET N-CHANNEL 30V 13A OPTIMOS3 TDSON8, RL	1620	25:£0.1560
BSC080N03MSGATMA1 DISTI # BSC080N03MSGATMA1	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,30V,53A,35W,PG-TDSON-8	550	3:$0.4264 25:$0.3763 100:$0.3156 250:$0.2732 1000:$0.2537
BSC080N03MSGATMA1 DISTI # 1775456	Infineon Technologies AG	MOSFET, N CH, 53A, 30V, PG-TDSON-8 RoHS: Compliant	0	1:$1.0800 10:$0.8900 100:$0.5750 1000:$0.4610 5000:$0.3900
BSC080N03MSGATMA1 DISTI # C1S322000595914	Infineon Technologies AG	MOSFETs RoHS: Compliant	5000	250:$0.3443 100:$0.3708 25:$0.4437 10:$0.4539

图片	型号	描述
	Mfr.#: BSC080N03LSGATMA1 OMO.#: OMO-BSC080N03LSGATMA1	MOSFET N-Ch 30V 53A TDSON-8 OptiMOS 3
	Mfr.#: BSC080N03MS G OMO.#: OMO-BSC080N03MS-G	MOSFET N-Ch 30V 53A TDSON-8 OptiMOS 3M
	Mfr.#: BSC080N03MSGATMA1 OMO.#: OMO-BSC080N03MSGATMA1	MOSFET LV POWER MOS
	Mfr.#: BSC080N03LS OMO.#: OMO-BSC080N03LS-1190	全新原装
	Mfr.#: BSC080N03LS G OMO.#: OMO-BSC080N03LS-G-1190	Trans MOSFET N-CH 30V 14A 8-Pin TDSON T/R (Alt: BSC080N03LS G)
	Mfr.#: BSC080N03LSGATMA1 OMO.#: OMO-BSC080N03LSGATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 30V 53A TDSON-8
	Mfr.#: BSC080N03MSG OMO.#: OMO-BSC080N03MSG-1190	Power Field-Effect Transistor, 13A I(D), 30V, 0.0102ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
	Mfr.#: BSC080N03MSGATMA1 OMO.#: OMO-BSC080N03MSGATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 30V 53A TDSON-8
	Mfr.#: BSC080N03NMS OMO.#: OMO-BSC080N03NMS-1190	全新原装
	Mfr.#: BSC080N03LSGATMA1-CUT TAPE OMO.#: OMO-BSC080N03LSGATMA1-CUT-TAPE-1190	全新原装

BSC080N03MSGATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes