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IPB029N06N

IPB029N06N
Mfr. #:
IPB029N06N
制造商:
Infineon Technologies
描述:
生命周期:
制造商新产品。
数据表:
IPB029N06N 数据表
交货:
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支付:
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ECAD Model:
产品属性
属性值
制造商
英飞凌科技
产品分类
晶体管 - FET、MOSFET - 单
系列
OptiMOS 3
打包
卷轴
部分别名
IPB029N06N3GATMA1 IPB029N06N3GXT SP000453052
单位重量
0.068654 oz
商品名
优化MOS
包装盒
TO-263-3
技术
硅
通道数
1 Channel
配置
单身的
晶体管型
1 N-Channel
钯功耗
188 W
最高工作温度
+ 175 C
最低工作温度
- 55 C
秋季时间
20 ns
上升时间
120 ns
VGS-栅极-源极-电压
20 V
Id 连续漏极电流
120 A
Vds-漏-源-击穿电压
60 V
Rds-On-Drain-Source-Resistance
2.9 mOhms
晶体管极性
N通道
典型关断延迟时间
62 ns
典型开启延迟时间
35 ns
通道模式
增强
Tags
IPB029, IPB02, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
型号 制造商 描述 库存 价格
IPB029N06N3GATMA1
DISTI # V72:2272_06383202		Infineon Technologies AGTrans MOSFET N-CH 60V 120A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		629
  • 1:$1.1974
IPB029N06N3GATMA1
DISTI # V36:1790_06383202		Infineon Technologies AGTrans MOSFET N-CH 60V 120A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		0
  • 1000:$0.6963
IPB029N06N3GE8187ATMA1
DISTI # V36:1790_06383203		Infineon Technologies AGTrans MOSFET N-CH 60V 120A0
  • 10000000:$0.8108
  • 100000:$0.8884
  • 1000:$1.0190
IPB029N06N3GATMA1
DISTI # IPB029N06N3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 60V 120A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		637In Stock
  • 500:$1.1356
  • 100:$1.3822
  • 10:$1.7200
  • 1:$1.9100
IPB029N06N3GATMA1
DISTI # IPB029N06N3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 60V 120A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		637In Stock
  • 500:$1.1356
  • 100:$1.3822
  • 10:$1.7200
  • 1:$1.9100
IPB029N06N3GATMA1
DISTI # IPB029N06N3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 60V 120A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		On Order
  • 5000:$0.8400
  • 2000:$0.8505
  • 1000:$0.9135
IPB029N06N3GE8187ATMA1
DISTI # IPB029N06N3GE8187ATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 60V 120A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 1000:$1.0186
IPB029N06N3GATMA1
DISTI # 32628473		Infineon Technologies AGTrans MOSFET N-CH 60V 120A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		21000
  • 1000:$0.7728
IPB029N06N3 G
DISTI # 32730959		Infineon Technologies AG01000
  • 200:$1.2342
  • 100:$1.2470
  • 50:$1.4917
  • 14:$1.6193
IPB029N06N3GATMA1
DISTI # 32825842		Infineon Technologies AGTrans MOSFET N-CH 60V 120A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		1000
  • 1000:$0.8613
IPB029N06N3GATMA1
DISTI # 28985310		Infineon Technologies AGTrans MOSFET N-CH 60V 120A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		629
  • 500:$1.0450
  • 250:$1.0895
  • 100:$1.1926
  • 25:$1.3380
  • 10:$1.4867
IPB029N06N3G
DISTI # SP000453052		Infineon Technologies AGTrans MOSFET N-CH 60V 120A 3-Pin TO-263 T/R (Alt: SP000453052)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel		Europe - 0
  • 10000:€0.6179
  • 6000:€0.6599
  • 4000:€0.7569
  • 2000:€0.9069
  • 1000:€1.0801
IPB029N06N3G
DISTI # SP000453052		Infineon Technologies AGTrans MOSFET N-CH 60V 120A 3-Pin TO-263 T/R (Alt: SP000453052)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel		Europe - 0
  • 10000:€0.5819
  • 6000:€0.6269
  • 4000:€0.6799
  • 2000:€0.7409
  • 1000:€0.9059
IPB029N06N3GATMA1
DISTI # IPB029N06N3GATMA1		Infineon Technologies AGTrans MOSFET N-CH 60V 120A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB029N06N3GATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 10000:$0.6089
  • 6000:$0.6199
  • 4000:$0.6419
  • 2000:$0.6659
  • 1000:$0.6909
IPB029N06N3GE8187ATMA1
DISTI # IPB029N06N3GE8187ATMA1		Infineon Technologies AGTrans MOSFET N-CH 60V 120A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB029N06N3GE8187ATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 10000:$0.8499
  • 6000:$0.8649
  • 4000:$0.8949
  • 2000:$0.9289
  • 1000:$0.9629
IPB029N06N3GATMA1
DISTI # 97Y1820		Infineon Technologies AGMOSFET, N-CH, 60V, 120A, TO-263-3,Transistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0023ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes990
  • 500:$1.0600
  • 250:$1.1400
  • 100:$1.2100
  • 50:$1.3100
  • 25:$1.4100
  • 10:$1.5200
  • 1:$1.7800
IPB029N06N3GATMA1
DISTI # 726-IPB029N06N3GATMA		Infineon Technologies AGMOSFET N-Ch 60V 120A D2PAK-2 OptiMOS 3
RoHS: Compliant		802
  • 1:$1.7600
  • 10:$1.5000
  • 100:$1.2000
  • 500:$1.0500
  • 1000:$0.8700
  • 2000:$0.8110
  • 5000:$0.7810
  • 10000:$0.7500
IPB029N06N3 G
DISTI # 726-IPB029N06N3G		Infineon Technologies AGMOSFET N-Ch 60V 120A D2PAK-2 OptiMOS 3
RoHS: Compliant		15
  • 1:$1.7600
  • 10:$1.5000
  • 100:$1.2000
  • 500:$1.0500
  • 1000:$0.8700
  • 2000:$0.8110
  • 5000:$0.7810
  • 10000:$0.7500
IPB029N06N3GE8187ATMA1
DISTI # 726-IPB029N06N3GE818		Infineon Technologies AGMOSFET N-Ch 60V 120A D2PAK-2
RoHS: Compliant		0
    IPB029N06N3GATMA1
    DISTI # 9140185P    		Infineon Technologies AGMOSFET N-CHANNEL 60V 120A OPTIMOS TO263, RL1900
    • 100:£0.9470
    • 50:£1.0390
    IPB029N06N3GE8187ATMA1
    DISTI # 8269200P    		Infineon Technologies AGMOSFET N-CH 120A 60V OPTIMOS3 TO263, RL310
    • 100:£0.9470
    • 50:£1.0390
    IPB029N06N3GATMA1
    DISTI # 2617425    		Infineon Technologies AGMOSFET, N-CH, 60V, 120A, TO-263-31005
    • 500:£0.8090
    • 250:£0.8680
    • 100:£0.9260
    • 10:£1.1900
    • 1:£1.5500
    IPB029N06N3GATMA1
    DISTI # 2617425    		Infineon Technologies AGMOSFET, N-CH, 60V, 120A, TO-263-3
    RoHS: Compliant    		990
    • 500:$1.8200
    • 100:$2.3400
    • 10:$2.9100
    • 1:$3.2300
    图片 型号 描述
    IPB020N10N5LFATMA1

    Mfr.#: IPB020N10N5LFATMA1

    OMO.#: OMO-IPB020N10N5LFATMA1

    		 MOSFET DIFFERENTIATED MOSFETS
    IPB024N10N5ATMA1

    Mfr.#: IPB024N10N5ATMA1

    OMO.#: OMO-IPB024N10N5ATMA1

    		 MOSFET DIFFERENTIATED MOSFETS
    IPB027N10N3 G

    Mfr.#: IPB027N10N3 G

    OMO.#: OMO-IPB027N10N3-G

    		 MOSFET N-Ch 100V 120A D2PAK-2 OptiMOS 3
    IPB020N04N

    Mfr.#: IPB020N04N

    OMO.#: OMO-IPB020N04N-1190

    		 全新原装
    IPB021N04N

    Mfr.#: IPB021N04N

    OMO.#: OMO-IPB021N04N-1190

    		 全新原装
    IPB022N04LG

    Mfr.#: IPB022N04LG

    OMO.#: OMO-IPB022N04LG-1190

    		 Power Field-Effect Transistor, 90A I(D), 40V, 0.0029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    IPB023N04N

    Mfr.#: IPB023N04N

    OMO.#: OMO-IPB023N04N-1190

    		 全新原装
    IPB025N08N3 G

    Mfr.#: IPB025N08N3 G

    OMO.#: OMO-IPB025N08N3-G-1190

    		 Trans MOSFET N-CH 80V 120A 3-Pin TO-263 T/R - Bulk (Alt: IPB025N08N3 G)
    IPB027N10N 027N10N

    Mfr.#: IPB027N10N 027N10N

    OMO.#: OMO-IPB027N10N-027N10N-1190

    		 全新原装
    IPB020N08N5ATMA1

    Mfr.#: IPB020N08N5ATMA1

    OMO.#: OMO-IPB020N08N5ATMA1-INFINEON-TECHNOLOGIES

    		 RF Bipolar Transistors MOSFET N-Ch 80V 120A D2PAK-2
    可用性
    库存:
    Available
    订购:
    5000
    输入数量:
    IPB029N06N的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格（美元）
    数量
    单价
    小计金额
    1
    US$0.00
    US$0.00
    10
    US$0.00
    US$0.00
    100
    US$0.00
    US$0.00
    500
    US$0.00
    US$0.00
    1000
    US$0.00
    US$0.00
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