STP315N10F7

Mfr. #:: STP315N10F7
制造商:: STMicroelectronics
描述:: MOSFET N-CH 100V 180A TO-220AB
生命周期:: 制造商新产品。
数据表:: STP315N10F7 数据表
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更多信息:: STP315N10F7 更多信息 STP315N10F7 Product Details

产品属性
属性值

制造商: 英石

产品分类: FET - 单

系列: DeepGATE、STripFET VII

打包: 管子

单位重量: 0.011640 oz

安装方式: 通孔

包装盒: TO-220-3

技术: 硅

工作温度: -55°C ~ 175°C (TJ)

安装型: 通孔

通道数: 1 Channel

供应商-设备-包: TO-220

配置: 单身的

FET型: MOSFET N 沟道，金属氧化物

最大功率: 315W

晶体管型: 1 N-Channel

漏源电压 Vdss: 100V

输入电容-Ciss-Vds: 12800pF @ 25V

FET-Feature: 标准

Current-Continuous-Drain-Id-25°C: 180A (Tc)

Rds-On-Max-Id-Vgs: 2.7 mOhm @ 60A, 10V

Vgs-th-Max-Id: 4.5V @ 250μA

栅极电荷-Qg-Vgs: 180nC @ 10V

钯功耗: 315 W

最高工作温度: + 175 C

最低工作温度: - 55 C

秋季时间: 40 ns

上升时间: 108 ns

VGS-栅极-源极-电压: 20 V

Id 连续漏极电流: 180 A

Vds-漏-源-击穿电压: 100 V

VGS-th-Gate-Source-Threshold-Voltage: 3.5 V

Rds-On-Drain-Source-Resistance: 2.3 mOhms

晶体管极性: N通道

典型关断延迟时间: 148 ns

典型开启延迟时间: 62 ns

Qg-门电荷: 180 nC

Tags: STP31, STP3, STP

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

STP315N10F7 描述

***p One Stop Japan: Trans MOSFET N-CH 100V 180A Automotive 3-Pin(3+Tab) TO-220 Tube

***icroelectronics: Automotive-grade N-channel 100 V, 2.3 mOhm typ., 180 A STripFET F7 Power MOSFET in a TO-220 package

***el Electronic: STMICROELECTRONICS STP315N10F7 MOSFET Transistor, N Channel, 180 A, 100 V, 0.0023 ohm, 10 V, 3.5 V

STP315N10F7 更多信息

STH315N10F7 STripFET VII DeepGATE Power MOSFETs: STMicroelectronics STH315N10F7 STripFET™ VII DeepGATE™ Power MOSFETs are AEC-Q101 automotive-qualified N-channel Power MOSFETs that combine best-in-class on-state resistance with low internal capacitances and gate charge, enhancing both conduction and switching efficiency. Available in TO-220 or 2-lead or 6-lead H2PAK industry-standard packages, these devices help designers reduce board size and maximize power density. STH315N10F7 MOSFETs also have high avalanche ruggedness to survive potentially damaging conditions. With a 100V rating, these STripFET VII DeepGATE MOSFETs provide an adequate safety margin to withstand typical over-voltage surges. STH315N10F7 STripFET VII DeepGATE MOSFETs are also well-suited for highly rugged performance in automotive and switching applications.

STripFET Power MOSFETs: STMIcroelectronics STripFET™ Power MOSFETs are enhancement-mode MOSFETs that benefit from the latest refinement of the STMicroelectronics proprietary STripFET™ technology with a new gate structure. The resulting STripFET™ Power MOSFET exhibits the high current and low RDS(on) required by automotive and industrial switching applications such as motor control, UPS, DC/DC converters, induction heater vaporizers and solar. STMicroelectronics STripFET™ Power MOSFETs have a very low switching gate charge, high avalanche ruggedness, low gate drive power losses and high power density. These STripFET™ Power MOSFETs offer among the industry's lowest RDS(on) 30V-150V power MOSFETs in the market.

STripFET™ F7 Power MOSFETs: STMicroelectronics STripFET F7 MOSFETs feature an enhanced trench-gate structure with faster and more efficient switching for simplified designs and reduced equipment size and cost. Low on-state resistance combined with low switching losses lower on-state resistance while reducing internal capacitances and gate charge. They are ideal for synchronous rectification and have an optimal capacitance Crss/Ciss ratio for lowest EMI. The STripFET F7 feature high avalanche ruggedness.

Standard Products: STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.

Market price

型号	制造商	描述	库存	价格
STP315N10F7 DISTI # V99:2348_18461576	STMicroelectronics	Trans MOSFET N-CH 100V 180A Automotive 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant	0
STP315N10F7 DISTI # V36:1790_06564689	STMicroelectronics	Trans MOSFET N-CH 100V 180A Automotive 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant	0
STP315N10F7 DISTI # 497-14717-5-ND	STMicroelectronics	MOSFET N-CH 100V 180A TO-220AB RoHS: Compliant Min Qty: 1 Container: Tube	1029In Stock	2500:$2.9494 500:$3.6812 100:$4.3243 50:$4.9896 10:$5.2780 1:$5.8800
STP315N10F7 DISTI # STP315N10F7	STMicroelectronics	Trans MOSFET N-CH 100V 180A 3-Pin TO-220 Tube (Alt: STP315N10F7) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 0	1000:€1.6900 500:€1.7900 100:€1.8900 25:€1.9900 50:€1.9900 10:€2.0900 1:€2.2900
STP315N10F7 DISTI # STP315N10F7	STMicroelectronics	Trans MOSFET N-CH 100V 180A 3-Pin TO-220 Tube - Rail/Tube (Alt: STP315N10F7) RoHS: Compliant Min Qty: 1000 Container: Tube	Americas - 0	10000:$2.4900 6000:$2.5900 4000:$2.6900 2000:$2.7900 1000:$2.9900
STP315N10F7 DISTI # 79X6519	STMicroelectronics	PTD LOW VOLTAGE	0	500:$2.6200 250:$2.7100 100:$3.2300 50:$3.7300 25:$3.9800 10:$4.5400 1:$5.2500
STP315N10F7 DISTI # 511-STP315N10F7	STMicroelectronics	MOSFET Automotive-grade N-channel 100 V, 2.3 mOhm typ., 180 A STripFET F7 Power MOSFET in a TO-220 package RoHS: Compliant	0	1:$5.3400 10:$4.5400 100:$3.9400 250:$3.7300 500:$3.3500
STP315N10F7 DISTI # 2451119	STMicroelectronics	MOSFET, N CH, 100V, 180A, TO-220-3 RoHS: Compliant	0	500:$5.1600 250:$5.7400 100:$6.0600 10:$6.9800 1:$8.2200
STP315N10F7 DISTI # STP315N10F7	STMicroelectronics	N-Ch 100V 180A 315W 0,0027R TO220 RoHS: Compliant	0	10:€2.2200 50:€2.0200 200:€1.9200 500:€1.8500

图片	型号	描述
	Mfr.#: STP31N65M5 OMO.#: OMO-STP31N65M5	MOSFET N-Ch 650V 0.124 Ohm 22 A MDmesh V
	Mfr.#: STP310N10F7 OMO.#: OMO-STP310N10F7	MOSFET N-Ch 100V 2.7 mOhm 180A STripFET VII
	Mfr.#: STP315N10F7 OMO.#: OMO-STP315N10F7	MOSFET Automotive-grade N-channel 100 V, 2.3 mOhm typ., 180 A STripFET F7 Power MOSFET in a TO-220 package
	Mfr.#: STP31N65M5 OMO.#: OMO-STP31N65M5-STMICROELECTRONICS	MOSFET N-CH 650V 22A TO-220
	Mfr.#: STP315N10F7 OMO.#: OMO-STP315N10F7-STMICROELECTRONICS	MOSFET N-CH 100V 180A TO-220AB
	Mfr.#: STP315N10F7-CUT TAPE OMO.#: OMO-STP315N10F7-CUT-TAPE-1190	全新原装
	Mfr.#: STP310N10F7 OMO.#: OMO-STP310N10F7-STMICROELECTRONICS	MOSFET N CH 100V 180A TO-220
	Mfr.#: STP310N10F7ES OMO.#: OMO-STP310N10F7ES-1190	全新原装
	Mfr.#: STP312 OMO.#: OMO-STP312-1190	全新原装
	Mfr.#: STP31N65M5,31N65M5 OMO.#: OMO-STP31N65M5-31N65M5-1190	全新原装

STP315N10F7

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes