FGA30S120P

Mfr. #:: FGA30S120P
制造商:: ON Semiconductor
描述:: IGBT Transistors Shorted AnodeTM IGBT
生命周期:: 制造商新产品。
数据表:: FGA30S120P 数据表
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ECAD Model:
更多信息:: FGA30S120P 更多信息

产品属性
属性值

制造商: 仙童半导体

产品分类: IGBT - 单

系列: -

打包: 管子

单位重量: 0.225789 oz

安装方式: 通孔

包装盒: TO-3P-3, SC-65-3

输入类型: 标准

安装型: 通孔

供应商-设备-包: TO-3P

配置: 单身的

最大功率: 348W

反向恢复时间trr: -

电流收集器 Ic-Max: 60A

电压收集器发射极击穿最大值: 1300V

IGBT型: 海沟场停止

电流收集器脉冲Icm: 150A

Vce-on-Max-Vge-Ic: 2.3V @ 15V, 30A

开关能源: -

栅极电荷: 78nC

Td-on-off-25°C: -

测试条件: -

钯功耗: 174 W

最高工作温度: + 175 C

最低工作温度: - 55 C

集电极-发射极-电压-VCEO-Max: 1300 V

集电极-发射极-饱和-电压: 2.3 V

25-C 时的连续集电极电流: 60 A

栅极-发射极-漏电流: 500 nA

最大栅极发射极电压: 25 V

连续集电极电流 Ic-Max: 60 A

Tags: FGA30, FGA3, FGA

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FGA30S120P 更多信息

Shorted Anode™ Trench IGBTs: ON Semiconductor Shorted Anode Trench IGBTs™ deliver superior conduction, switching performances, and easy parallel operation with exceptional avalanche capability. Fairchild Shorted Anode Trench IGBTs feature Field Stop Trench and Shorted Anode technology and are designed for induction heating, microwave oven applications, and soft switching applications.Learn More

Market price

型号	制造商	描述	库存	价格
FGA30S120P DISTI # V99:2348_06359130	ON Semiconductor	Trans IGBT Chip N-CH 1300V 60A 348000mW 3-Pin(3+Tab) TO-3PN Rail	892	5000:$2.1960 2500:$2.2720 1000:$2.3730 500:$2.7460 250:$2.9990 100:$3.1410 10:$3.5010 1:$4.0250
FGA30S120P DISTI # FGA30S120P-ND	ON Semiconductor	IGBT 1300V 60A 348W TO3P RoHS: Compliant Min Qty: 1 Container: Tube	450In Stock	1350:$2.5725 900:$3.0503 450:$3.3994 10:$4.3730 1:$4.8700
FGA30S120P DISTI # 26398855	ON Semiconductor	Trans IGBT Chip N-CH 1300V 60A 348000mW 3-Pin(3+Tab) TO-3PN Rail	892	500:$2.7420 250:$2.9939 100:$3.1360 10:$3.4940 3:$4.0170
FGA30S120P DISTI # FGA30S120P	ON Semiconductor	Trans IGBT Chip N-CH 1.3KV 60A 3-Pin(3+Tab) TO-3P(N) Rail - Rail/Tube (Alt: FGA30S120P) RoHS: Compliant Min Qty: 450 Container: Tube	Americas - 0	450:$2.1900 900:$2.1900 1800:$2.1900 2700:$2.1900 4500:$2.0900
FGA30S120P DISTI # 95T0023	ON Semiconductor	SA2TIGBT TO3PN 30A 1200V / TUBE	0	1:$5.0800 10:$4.1200 100:$3.4200 500:$3.0900 1000:$2.6300 2500:$2.5100 10000:$2.3700
FGA30S120P DISTI # 512-FGA30S120P	ON Semiconductor	IGBT Transistors Shorted AnodeTM IGBT RoHS: Compliant	375	1:$4.6300 10:$3.9300 100:$3.4100 250:$3.2300 500:$2.9000
FGA30S120P	Fairchild Semiconductor Corporation	Insulated Gate Bipolar Transistor, 60A I(C), 1300V V(BR)CES, N-Channel RoHS: Compliant	2700	1000:$2.5500 500:$2.6900 100:$2.8000 25:$2.9200 1:$3.1400
FGA30S120P DISTI # 8648789P	ON Semiconductor	IGBT 1200V 30A SHORTED-ANODE TO3PN, TU	204	10:£3.5950 40:£3.1450 100:£2.9400 200:£2.8050
FGA30S120P DISTI # 8648789	ON Semiconductor	IGBT 1200V 30A SHORTED-ANODE TO3PN, PK	30	2:£4.0800 10:£3.5950 40:£3.1450 100:£2.9400 200:£2.8050
FGA30S120P DISTI # C1S226600774282	ON Semiconductor	Trans IGBT Chip N-CH 1.3KV 60A 3-Pin(3+Tab) TO-3PN Rail RoHS: Compliant	892	500:$2.7420 250:$2.9939 100:$3.1360 10:$3.4940 1:$4.0170

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