STGWT30H65FB

Mfr. #:: STGWT30H65FB
制造商:: STMicroelectronics
描述:: IGBT Transistors IGBT & Power Bipola
生命周期:: 制造商新产品。
数据表:: STGWT30H65FB 数据表
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更多信息:: STGWT30H65FB 更多信息 STGWT30H65FB Product Details

产品属性
属性值

制造商: 意法半导体

产品分类: IGBT - 单

系列: 600-650V IGBTs

打包: 管子

单位重量: 0.238311 oz

安装方式: 通孔

包装盒: TO-3P-3, SC-65-3

输入类型: 标准

安装型: 通孔

供应商-设备-包: TO-3P

配置: 单身的

最大功率: 260W

反向恢复时间trr: -

电流收集器 Ic-Max: 30A

电压收集器发射极击穿最大值: 650V

IGBT型: 海沟场停止

电流收集器脉冲Icm: 120A

Vce-on-Max-Vge-Ic: 2V @ 15V, 30A

开关能源: 151μJ (on), 293μJ (off)

栅极电荷: 149nC

Td-on-off-25°C: 37ns/146ns

测试条件: 400V, 30A, 10 Ohm, 15V

钯功耗: 260 W

最高工作温度: + 175 C

最低工作温度: - 55 C

集电极-发射极-电压-VCEO-Max: 650 V

集电极-发射极-饱和-电压: 1.75 V

25-C 时的连续集电极电流: 30 A

栅极-发射极-漏电流: 250 nA

最大栅极发射极电压: +/- 20 V

连续集电极电流 Ic-Max: 60 A

Tags: STGWT30, STGWT3, STGWT, STGW, STG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

STGWT30H65FB 更多信息

IGBT HB/HB2 Series: STMicroelectronics IGBT HB/HB2 Series IGBTs combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary trench gate field-stop (TGFS) structure.

Market price

型号	制造商	描述	库存	价格
STGWT30H65FB DISTI # V79:2366_17785984	STMicroelectronics	Trans IGBT Chip N-CH 650V 60A 3-Pin(3+Tab) TO-3P Tube RoHS: Compliant	600	1000:$1.9210 500:$2.2730 100:$2.5380 10:$2.9220 1:$3.7752
STGWT30H65FB DISTI # V36:1790_06560823	STMicroelectronics	Trans IGBT Chip N-CH 650V 60A 3-Pin(3+Tab) TO-3P Tube RoHS: Compliant	0
STGWT30H65FB DISTI # 497-14468-5-ND	STMicroelectronics	IGBT 650V 30A 260W TO3PL RoHS: Compliant Min Qty: 1 Container: Tube	469In Stock	2520:$1.8340 510:$2.2833 120:$2.6822 30:$3.0950 10:$3.2740 1:$3.6500
STGWT30H65FB DISTI # 26114943	STMicroelectronics	Trans IGBT Chip N-CH 650V 60A 3-Pin(3+Tab) TO-3P Tube RoHS: Compliant	600	1000:$2.0651 500:$2.4435 100:$2.7283 10:$3.1412 4:$3.6894
STGWT30H65FB DISTI # STGWT30H65FB	STMicroelectronics	Trans IGBT Chip N-CH 650V 60A 3-Pin TO-3P Tube (Alt: STGWT30H65FB) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 300	500:€1.4900 1000:€1.4900 25:€1.5900 50:€1.5900 100:€1.5900 1:€1.6900 10:€1.6900
STGWT30H65FB DISTI # STGWT30H65FB	STMicroelectronics	Trans IGBT Chip N-CH 650V 60A 3-Pin TO-3P Tube - Rail/Tube (Alt: STGWT30H65FB) RoHS: Compliant Min Qty: 600 Container: Tube	Americas - 0	6000:$1.5900 1800:$1.6900 3000:$1.6900 1200:$1.7900 600:$1.8900
STGWT30H65FB DISTI # 55X3474	STMicroelectronics	PTD HIGH VOLTAGE	0	500:$1.7100 250:$1.7600 100:$2.1000 50:$2.4300 25:$2.5800 10:$2.9500 1:$3.4100
STGWT30H65FB DISTI # 511-STGWT30H65FB	STMicroelectronics	IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 30 A high speed RoHS: Compliant	376	1:$3.4600 10:$2.9400 100:$2.5500 250:$2.4200 500:$2.1700 1000:$1.8300 2500:$1.7400
STGWT30H65FB	STMicroelectronics		759
STGWT30H65FB DISTI # XSKDRABV0027581	STMicroelectronics	InsulatedGateBipolarTransistor,25AI(C),600VV(BR)CES,N-Channel,TO-220AB RoHS: Compliant	240 in Stock0 on Order	240:$2.9280

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