STGWT30H60DFB

Mfr. #:: STGWT30H60DFB
制造商:: STMicroelectronics
描述:: IGBT Transistors IGBT & Power Bipola
生命周期:: 制造商新产品。
数据表:: STGWT30H60DFB 数据表
交货:: DHL FedEx Ups TNT EMS
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ECAD Model:
更多信息:: STGWT30H60DFB 更多信息 STGWT30H60DFB Product Details

产品属性
属性值

制造商: 意法半导体

产品分类: IGBT - 单

系列: 600-650V IGBTs

打包: 管子

单位重量: 0.238311 oz

安装方式: 通孔

包装盒: TO-3P-3, SC-65-3

输入类型: 标准

安装型: 通孔

供应商-设备-包: TO-3P

配置: 单身的

最大功率: 260W

反向恢复时间trr: 53ns

电流收集器 Ic-Max: 60A

电压收集器发射极击穿最大值: 600V

IGBT型: 海沟场停止

电流收集器脉冲Icm: 120A

Vce-on-Max-Vge-Ic: 2V @ 15V, 30A

开关能源: 383μJ (on), 293μJ (off)

栅极电荷: 149nC

Td-on-off-25°C: 37ns/146ns

测试条件: 400V, 30A, 10 Ohm, 15V

钯功耗: 260 W

最高工作温度: + 175 C

最低工作温度: - 55 C

集电极-发射极-电压-VCEO-Max: 600 V

集电极-发射极-饱和-电压: 1.55 V

25-C 时的连续集电极电流: 60 A

栅极-发射极-漏电流: 250 nA

最大栅极发射极电压: 20 V

连续集电极电流 Ic-Max: 30 A

Tags: STGWT30, STGWT3, STGWT, STGW, STG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

STGWT30H60DFB 描述

***Components: In a Pack of 2, STMicroelectronics STGWT30H60DFB IGBT, 60 A 600 V, 3-Pin TO-3P

***ical: Trans IGBT Chip N-CH 600V 60A 260000mW 3-Pin(3+Tab) TO-3P Tube

***ure Electronics: HB Series 600 V 30 A Flange Mount Trench Gate Field-Stop IGBT - TO-3P

***et Europe: Trans IGBT Chip N-CH 600V 60A 3-Pin TO-3P Tube

***ied Electronics & Automation: IGBT 600V 30A Trench Field-Stop TO-3P

***i-Key: IGBT 600V 60A 260W TO3PL

***ark: Ptd High Voltage

Market price

型号	制造商	描述	库存	价格
STGWT30H60DFB DISTI # 29515997	STMicroelectronics	Trans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-3P Tube RoHS: Compliant	600	1000:$1.7740 500:$2.1035 300:$2.4709
STGWT30H60DFB DISTI # 497-15140-5-ND	STMicroelectronics	IGBT 600V 60A 260W TO3PL RoHS: Compliant Min Qty: 1 Container: Tube	3In Stock	2520:$1.7066 510:$2.1247 120:$2.4959 30:$2.8800 10:$3.0460 1:$3.3900
STGWT30H60DFB DISTI # V99:2348_17652424	STMicroelectronics	Trans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-3P Tube RoHS: Compliant	0
STGWT30H60DFB DISTI # V36:1790_06560822	STMicroelectronics	Trans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-3P Tube RoHS: Compliant	0
STGWT30H60DFB DISTI # STGWT30H60DFB	STMicroelectronics	Trans IGBT Chip N-CH 600V 60A 3-Pin TO-3P Tube (Alt: STGWT30H60DFB) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 0	500:€1.4900 1000:€1.4900 25:€1.5900 50:€1.5900 100:€1.5900 1:€1.6900 10:€1.6900
STGWT30H60DFB DISTI # STGWT30H60DFB	STMicroelectronics	Trans IGBT Chip N-CH 600V 60A 3-Pin TO-3P Tube - Rail/Tube (Alt: STGWT30H60DFB) RoHS: Compliant Min Qty: 300 Container: Tube	Americas - 0	1500:$1.4900 3000:$1.4900 900:$1.5900 600:$1.6900 300:$1.7900
STGWT30H60DFB DISTI # 26Y5807	STMicroelectronics	PTD HIGH VOLTAGE	0	500:$1.5900 250:$1.6400 100:$1.9500 50:$2.2600 25:$2.4100 10:$2.7500 1:$3.1700
STGWT30H60DFB DISTI # 511-STGWT30H60DFB	STMicroelectronics	IGBT Transistors Trench gate field-stop IGBT, HB series 600 V, 30 A high speed RoHS: Compliant	0	1:$3.2200 10:$2.7400 100:$2.3700 250:$2.2500 500:$2.0200 1000:$1.7000 2500:$1.6200 5000:$1.5600
STGWT30H60DFB DISTI # 8607325P	STMicroelectronics	IGBT 600V 30A TRENCH FIELD-STOP TO-3P, TU	222	20:£1.2000

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