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BSC883N03LSGATMA1

BSC883N03LSGATMA1
Mfr. #:
BSC883N03LSGATMA1
制造商:
Infineon Technologies
描述:
MOSFET LV POWER MOS
生命周期:
制造商新产品。
数据表:
BSC883N03LSGATMA1 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
产品属性
属性值
制造商：
英飞凌
产品分类：
MOSFET
技术：
硅
安装方式：
贴片/贴片
包装/案例：
TDSON-8
打包：
卷轴
高度：
1.27 mm
长度：
5.9 mm
宽度：
5.15 mm
品牌：
英飞凌科技
产品类别：
MOSFET
子类别：
MOSFET
第 # 部分别名：
BSC883N03LS BSC883N3LSGXT G SP000507422
Tags
BSC883N03LSG, BSC883N03L, BSC883, BSC8, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 34 V 3.8 mOhm 34 nC OptiMOS™ Power Mosfet - TDSON-8
***et
Transistor MOSFET N-CH 34V 98A 8-Pin TDSON Tube
***ical
Trans MOSFET N-CH 34V 17A 8-Pin TDSON EP T/R
***ark
Mosfet, N-Ch, 34V, 98A, Pg-Tdson-8; Transistor Polarity:n Channel; Continuous Drain Current Id:98A; Drain Source Voltage Vds:34V; On Resistance Rds(On):0.0032Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; Power Rohs Compliant: Yes
型号 制造商 描述 库存 价格
BSC883N03LSGATMA1
DISTI # BSC883N03LSGATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 34V 17A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		4910In Stock
  • 1000:$0.4079
  • 500:$0.5099
  • 100:$0.6883
  • 10:$0.8920
  • 1:$1.0200
BSC883N03LSGATMA1
DISTI # BSC883N03LSGATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 34V 17A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Limited Supply - Call
    BSC883N03LSGATMA1
    DISTI # BSC883N03LSGATMA1TR-ND    		Infineon Technologies AGMOSFET N-CH 34V 17A TDSON-8
    RoHS: Compliant
    Min Qty: 5000
    Container: Tape & Reel (TR)    		Temporarily Out of Stock
    • 5000:$0.3341
    BSC883N03LSGXT
    DISTI # BSC883N03LSGATMA1    		Infineon Technologies AGTrans MOSFET N-CH 34V 17A 8-Pin TDSON EP - Tape and Reel (Alt: BSC883N03LSGATMA1)
    RoHS: Compliant
    Min Qty: 5000
    Container: Reel    		Americas - 0
    • 5000:$0.2589
    • 10000:$0.2499
    • 20000:$0.2399
    • 30000:$0.2319
    • 50000:$0.2279
    BSC883N03LSGATMA1
    DISTI # 97Y1252    		Infineon Technologies AGMOSFET, N-CH, 34V, 98A, PG-TDSON-8,Transistor Polarity:N Channel,Continuous Drain Current Id:98A,Drain Source Voltage Vds:34V,On Resistance Rds(on):0.0032ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.2V,Power RoHS Compliant: Yes4767
    • 1:$1.0200
    • 10:$0.8920
    • 25:$0.8240
    • 50:$0.7560
    • 100:$0.6880
    • 250:$0.5990
    • 500:$0.5090
    • 1000:$0.4070
    BSC883N03LS G
    DISTI # 726-BSC883N03LSG    		Infineon Technologies AGMOSFET N-Ch 34V 98A TDSON-8
    RoHS: Compliant    		4969
    • 1:$0.8400
    • 10:$0.6980
    • 100:$0.4500
    • 1000:$0.3600
    BSC883N03LSGATMA1Infineon Technologies AGPower Field-Effect Transistor, 17A I(D), 34V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant    		5000
    • 1000:$0.3200
    • 500:$0.3300
    • 100:$0.3500
    • 25:$0.3600
    • 1:$0.3900
    BSC883N03LSGATMA1
    DISTI # 2617421    		Infineon Technologies AGMOSFET, N-CH, 34V, 98A, PG-TDSON-8
    RoHS: Compliant    		4767
    • 1:$1.6300
    • 10:$1.4300
    • 100:$1.1000
    • 500:$0.8130
    • 1000:$0.6510
    BSC883N03LSGATMA1
    DISTI # 2617421    		Infineon Technologies AGMOSFET, N-CH, 34V, 98A, PG-TDSON-8
    RoHS: Compliant    		4767
    • 5:£0.7780
    • 25:£0.6980
    • 100:£0.5380
    • 250:£0.4690
    • 500:£0.3990
    图片 型号 描述
    BSC883N03LS G

    Mfr.#: BSC883N03LS G

    OMO.#: OMO-BSC883N03LS-G

    		 MOSFET N-Ch 34V 98A TDSON-8
    BSC883N03LSGATMA1

    Mfr.#: BSC883N03LSGATMA1

    OMO.#: OMO-BSC883N03LSGATMA1

    		 MOSFET LV POWER MOS
    BSC883N03LSGXT

    Mfr.#: BSC883N03LSGXT

    OMO.#: OMO-BSC883N03LSGXT-1190

    		 Trans MOSFET N-CH 34V 17A 8-Pin TDSON EP - Tape and Reel (Alt: BSC883N03LSGATMA1)
    BSC883N03LS

    Mfr.#: BSC883N03LS

    OMO.#: OMO-BSC883N03LS-1190

    		 全新原装
    BSC883N03LSG

    Mfr.#: BSC883N03LSG

    OMO.#: OMO-BSC883N03LSG-1190

    		 Power Field-Effect Transistor, 17A I(D), 34V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    BSC883N03LSGATMA1 , TDZF

    Mfr.#: BSC883N03LSGATMA1 , TDZF

    OMO.#: OMO-BSC883N03LSGATMA1-TDZF-1190

    		 全新原装
    BSC883N03MS

    Mfr.#: BSC883N03MS

    OMO.#: OMO-BSC883N03MS-1190

    		 全新原装
    BSC883N03MSG

    Mfr.#: BSC883N03MSG

    OMO.#: OMO-BSC883N03MSG-1190

    		 Power Field-Effect Transistor, 19A I(D), 34V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    BSC883N03MSGATMA1

    Mfr.#: BSC883N03MSGATMA1

    OMO.#: OMO-BSC883N03MSGATMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 34V 19A TDSON-8
    BSC883N03LS G

    Mfr.#: BSC883N03LS G

    OMO.#: OMO-BSC883N03LS-G-317

    		 RF Bipolar Transistors MOSFET N-Ch 34V 98A TDSON-8
    可用性
    库存:
    Available
    订购:
    5000
    输入数量:
    BSC883N03LSGATMA1的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
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