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| 型号 | 制造商 | 描述 | 库存 | 价格 |
|---|---|---|---|---|
| BSC883N03LSGATMA1 DISTI # BSC883N03LSGATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 34V 17A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 4910In Stock |
|
| BSC883N03LSGATMA1 DISTI # BSC883N03LSGATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 34V 17A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| BSC883N03LSGATMA1 DISTI # BSC883N03LSGATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 34V 17A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | Temporarily Out of Stock |
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| BSC883N03LS G DISTI # BSC883N03LS G | Infineon Technologies AG | Trans MOSFET N-CH 34V 17A 8-Pin TDSON EP (Alt: BSC883N03LS G) RoHS: Compliant Min Qty: 5000 | Asia - 0 | |
| BSC883N03LS G DISTI # SP000507422 | Infineon Technologies AG | Trans MOSFET N-CH 34V 17A 8-Pin TDSON EP (Alt: SP000507422) RoHS: Compliant Min Qty: 5000 | Europe - 0 |
|
| BSC883N03LSGXT DISTI # BSC883N03LSGATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 34V 17A 8-Pin TDSON EP - Tape and Reel (Alt: BSC883N03LSGATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel | Americas - 0 |
|
| BSC883N03LSGATMA1 DISTI # 97Y1252 | Infineon Technologies AG | MOSFET, N-CH, 34V, 98A, PG-TDSON-8,Transistor Polarity:N Channel,Continuous Drain Current Id:98A,Drain Source Voltage Vds:34V,On Resistance Rds(on):0.0032ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.2V,Power RoHS Compliant: Yes | 4766 |
|
| BSC883N03LSG | Infineon Technologies AG | Power Field-Effect Transistor, 17A I(D), 34V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 14999 |
|
| BSC883N03LS G | Infineon Technologies AG | RoHS: Not Compliant | 5000 |
|
| BSC883N03LSGATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 17A I(D), 34V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 5000 |
|
| BSC883N03LS G DISTI # 726-BSC883N03LSG | Infineon Technologies AG | MOSFET N-Ch 34V 98A TDSON-8 RoHS: Compliant | 4969 |
|
| BSC883N03LSGATMA1 DISTI # 2617421 | Infineon Technologies AG | MOSFET, N-CH, 34V, 98A, PG-TDSON-8 RoHS: Compliant | 4766 |
|
| BSC883N03LSGATMA1 DISTI # 2617421 | Infineon Technologies AG | MOSFET, N-CH, 34V, 98A, PG-TDSON-8 RoHS: Compliant | 4766 |
|
| 图片 | 型号 | 描述 |
|---|---|---|
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Mfr.#: BSC883N03LS G OMO.#: OMO-BSC883N03LS-G |
MOSFET N-Ch 34V 98A TDSON-8 |
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Mfr.#: BSC883N03LSGATMA1 OMO.#: OMO-BSC883N03LSGATMA1 |
MOSFET LV POWER MOS |
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Mfr.#: BSC883N03LSGXT OMO.#: OMO-BSC883N03LSGXT-1190 |
Trans MOSFET N-CH 34V 17A 8-Pin TDSON EP - Tape and Reel (Alt: BSC883N03LSGATMA1) |
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Mfr.#: BSC883N03LS OMO.#: OMO-BSC883N03LS-1190 |
全新原装 |
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Mfr.#: BSC883N03LSGATMA1 , TDZF |
全新原装 |
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Mfr.#: BSC883N03MS OMO.#: OMO-BSC883N03MS-1190 |
全新原装 |
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Mfr.#: BSC883N03MSG OMO.#: OMO-BSC883N03MSG-1190 |
Power Field-Effect Transistor, 19A I(D), 34V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
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Mfr.#: BSC883N03MSGATMA1 |
MOSFET N-CH 34V 19A TDSON-8 |
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Mfr.#: BSC883N03MS G OMO.#: OMO-BSC883N03MS-G-126 |
IGBT Transistors MOSFET N-Ch 30V 19A TDSON-8 |
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Mfr.#: BSC883N03LS G OMO.#: OMO-BSC883N03LS-G-317 |
RF Bipolar Transistors MOSFET N-Ch 34V 98A TDSON-8 |
