FGA6560WDF

Mfr. #:: FGA6560WDF
制造商:: ON Semiconductor
描述:: IGBT Transistors 650V FS Gen3 Trench IGBT
生命周期:: 制造商新产品。
数据表:: FGA6560WDF 数据表
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更多信息:: FGA6560WDF 更多信息

产品属性
属性值

制造商: 金融服务中心

产品分类: IGBT - 单

系列: -

打包: 管子

单位重量: 0.225789 oz

安装方式: 通孔

包装盒: TO-3P-3, SC-65-3

输入类型: 标准

安装型: 通孔

供应商-设备-包: TO-3PN

配置: 单身的

最大功率: 306W

反向恢复时间trr: 110ns

电流收集器 Ic-Max: 120A

电压收集器发射极击穿最大值: 650V

IGBT型: 海沟场停止

电流收集器脉冲Icm: 180A

Vce-on-Max-Vge-Ic: 2.3V @ 15V, 60A

开关能源: 2.46mJ (on), 520μJ (off)

栅极电荷: 84nC

Td-on-off-25°C: 25.6ns/71ns

测试条件: 400V, 60A, 6 Ohm, 15V

钯功耗: 306 W

最高工作温度: + 175 C

最低工作温度: - 55 C

集电极-发射极-电压-VCEO-Max: 650 V

集电极-发射极-饱和-电压: 1.8 V

25-C 时的连续集电极电流: 120 A

栅极-发射极-漏电流: 400 nA

最大栅极发射极电压: 30 V

连续集电极电流 Ic-Max: 120 A

Tags: FGA656, FGA65, FGA6, FGA

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FGA6560WDF 更多信息

Field Stop IGBTs: ON Semiconductor Field Stop (FS) IGBTs offer optimum performance with low conduction and switching losses. These IGBTs feature high current handling capability, positive temperature coefficient, tight parameter distribution, and a wide safe operating area. The FS IGBTs come with increased breakdown voltage that improves reliability where negative ambient temperatures are present. As the temperature decreases the IGBT and FRD blocking voltage also decreases that makes the devices particularly beneficial for PV solar inverters used in colder climates. These IGBTs provide fast and soft recovery that reduces power dissipation and achieves low turn-on and turn-off losses.

FGA6560WDF 650V 60A Field Stop Trench IGBT: ON Semiconductor FGA6560 650V 60A Field Stop Trench IGBT uses novel field stop IGBT technology. This IGBT features high current capability, low saturation voltage, high input impedance, and fast switching. The FGA6560 IGBT offers the optimum performance for welder applications that require low conduction and switching losses.

FGAFx0N60 Field Stop IGBTs: ON Semiconductor FGAFx0N60 650V Field Stop IGBTs use a novel field stop IGBT technology. These IGBTs feature high current capability, low saturation voltage, high input impedance, and fast switching. The FGAFx0N60 IGBTs offer the optimum performance for solar inverters, UPS, welder, and PFC applications that require low conduction and switching losses.

Market price

型号	制造商	描述	库存	价格
FGA6560WDF DISTI # V99:2348_06359255	ON Semiconductor	Trans IGBT Chip N-CH 650V 120A 306000mW 3-Pin(3+Tab) TO-3PN Rail	406	250:$3.5920 100:$3.7590 10:$4.2320 1:$4.8190
FGA6560WDF DISTI # FGA6560WDF-ND	ON Semiconductor	IGBT 650V 120A 306W TO-3PN RoHS: Compliant Min Qty: 1 Container: Tube	383In Stock	1350:$3.0650 900:$3.6342 450:$4.0501 10:$5.2100 1:$5.8000
FGA6560WDF DISTI # 25845326	ON Semiconductor	Trans IGBT Chip N-CH 650V 120A 306000mW 3-Pin(3+Tab) TO-3PN Rail	406	250:$3.5920 100:$3.7590 10:$4.2320 3:$4.8190
FGA6560WDF DISTI # FGA6560WDF	ON Semiconductor	Trans IGBT Chip N-CH 650V 120A 3-Pin TO-3PN Tube - Rail/Tube (Alt: FGA6560WDF) RoHS: Compliant Min Qty: 450 Container: Tube	Americas - 0	450:$2.6900 900:$2.6900 1800:$2.5900 2700:$2.5900 4500:$2.4900
FGA6560WDF DISTI # 512-FGA6560WDF	ON Semiconductor	IGBT Transistors FS3TIGBT TO3PN 60A 650V RoHS: Compliant	49	1:$5.5200 10:$4.7000 100:$4.0700 250:$3.8600
FGA6560WDF	Fairchild Semiconductor Corporation	Insulated Gate Bipolar Transistor RoHS: Compliant	31380	1000:$3.4100 500:$3.5900 100:$3.7400 25:$3.9000 1:$4.2000
FGA6560WDF DISTI # C1S541901510156	ON Semiconductor	Trans IGBT Chip N-CH 650V 120A 306000mW 3-Pin(3+Tab) TO-3PN Tube RoHS: Compliant	406	250:$3.5920 100:$3.7590 1:$4.8190

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