 |  | | |
| PartNumber | FGA6560WDF | FGA6560WDF-- | FGA6560 |
| Description | IGBT Transistors FS3TIGBT TO3PN 60A 650V | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | IGBT Transistors | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Package / Case | TO-3PN | - | - |
| Mounting Style | Through Hole | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 650 V | - | - |
| Collector Emitter Saturation Voltage | 1.8 V | - | - |
| Maximum Gate Emitter Voltage | 30 V | - | - |
| Continuous Collector Current at 25 C | 120 A | - | - |
| Pd Power Dissipation | 306 W | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Series | FGA6560WDF | - | - |
| Packaging | Tube | - | - |
| Continuous Collector Current Ic Max | 120 A | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Gate Emitter Leakage Current | 400 nA | - | - |
| Product Type | IGBT Transistors | - | - |
| Factory Pack Quantity | 450 | - | - |
| Subcategory | IGBTs | - | - |
| Unit Weight | 0.225789 oz | - | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FGA6560WDF | IGBT Transistors FS3TIGBT TO3PN 60A 650V | |
ON Semiconductor |
FGA6560WDF | IGBT Transistors 650V FS Gen3 Trench IGBT | |
| FGA6560WDF-- | 全新原装 | ||
| FGA6560 | 全新原装 |