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STGWT15H60F

STGWT15H60F
Mfr. #:
STGWT15H60F
制造商:
STMicroelectronics
描述:
IGBT Transistors Trench gate field-stop IGBT, H series 600 V, 15 A high speed
生命周期:
制造商新产品。
数据表:
STGWT15H60F 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
更多信息:
STGWT15H60F 更多信息 STGWT15H60F Product Details
产品属性
属性值
制造商：
意法半导体
产品分类：
IGBT晶体管
RoHS：
Y
技术：
硅
包装/案例：
TO-3P
安装方式：
通孔
配置：
单身的
集电极-发射极电压 VCEO 最大值：
600 V
集电极-发射极饱和电压：
1.6 V
最大栅极发射极电压：
20 V
25 C 时的连续集电极电流：
30 A
Pd - 功耗：
115 W
最低工作温度：
- 55 C
最高工作温度：
+ 175 C
系列：
STGWT15H60F
打包：
管子
品牌：
意法半导体
栅极-发射极漏电流：
250 nA
产品类别：
IGBT晶体管
出厂包装数量：
300
子类别：
IGBT
单位重量：
0.194007 oz
Tags
STGWT, STGW, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
IGBT H Series
STMicroelectronics 1200V H Series Trench Gate Field-Stop IGBTs represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. With ST's advanced Trench-Gate Field-Stop High-Speed technology, these IGBTs have a 5μs minimum short circuit withstand time at TJ=150°C, minimal collector current turn off tail, and very low saturation voltage (Vce(sat)) down to 2.1V (typical) to minimize energy losses during switching and when turned on. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.
型号 制造商 描述 库存 价格
STGWT15H60F
DISTI # V99:2348_18693036		STMicroelectronicsSTGWT15H60F0
    STGWT15H60F
    DISTI # 497-17620-ND    		STMicroelectronicsTRENCH GATE FIELD-STOP IGBT H SE
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		Temporarily Out of Stock
    • 5010:$0.9555
    • 2520:$0.9922
    • 510:$1.2862
    • 120:$1.5656
    • 30:$1.8377
    • 10:$1.9480
    • 1:$2.1700
    STGWT15H60F
    DISTI # STGWT15H60F    		STMicroelectronicsH Series Trench Gate Field-Stop IGBT 600V 30A ±20V Gate to Emitter Voltage 115W High Speed Tube - Trays (Alt: STGWT15H60F)
    RoHS: Compliant
    Min Qty: 720
    Container: Tray    		Americas - 0
    • 7200:$0.8429
    • 3600:$0.8639
    • 2160:$0.8859
    • 1440:$0.9089
    • 720:$0.9209
    STGWT15H60F
    DISTI # STGWT15H60F    		STMicroelectronicsH Series Trench Gate Field-Stop IGBT 600V 30A ±20V Gate to Emitter Voltage 115W High Speed Tube (Alt: STGWT15H60F)
    RoHS: Compliant
    Min Qty: 30
    Container: Tube    		Europe - 0
    • 300:€0.9739
    • 180:€1.0389
    • 120:€1.0659
    • 60:€1.1559
    • 30:€1.4059
    STGWT15H60F
    DISTI # 38AC2423    		STMicroelectronicsIGBT, SINGLE, 600V, 30A, TO-3P,DC Collector Current:30A,Collector Emitter Saturation Voltage Vce(on):1.6V,Power Dissipation Pd:115W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:175°C RoHS Compliant: Yes0
    • 5000:$0.9200
    • 2500:$0.9550
    • 1000:$1.0200
    • 500:$1.2300
    • 100:$1.4100
    • 10:$1.7700
    • 1:$2.0800
    STGWT15H60F
    DISTI # 511-STGWT15H60F    		STMicroelectronicsIGBT Transistors Trench gate field-stop IGBT, H series 600 V, 15 A high speed
    RoHS: Compliant    		0
    • 1:$2.0600
    • 10:$1.7500
    • 100:$1.4000
    • 500:$1.2200
    • 1000:$1.0100
    • 2500:$0.9460
    • 5000:$0.9110
    STGWT15H60F
    DISTI # 2797965    		STMicroelectronicsIGBT, SINGLE, 600V, 30A, TO-3P0
    • 500:£0.8970
    • 250:£0.9640
    • 100:£1.0300
    • 10:£1.3000
    • 1:£1.7100
    STGWT15H60F
    DISTI # 2797965    		STMicroelectronicsIGBT, SINGLE, 600V, 30A, TO-3P
    RoHS: Compliant    		0
    • 5010:$1.4800
    • 2520:$1.5000
    • 510:$1.9400
    • 120:$2.3600
    • 30:$2.7700
    • 5:$2.9400
    图片 型号 描述
    STGWT60V60DF

    Mfr.#: STGWT60V60DF

    OMO.#: OMO-STGWT60V60DF

    		 IGBT Transistors 600V 60A Trench Gate Field-Stop IGBT
    STGWT20H65FB

    Mfr.#: STGWT20H65FB

    OMO.#: OMO-STGWT20H65FB

    		 IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 20 A high speed
    STGWT20V60F

    Mfr.#: STGWT20V60F

    OMO.#: OMO-STGWT20V60F

    		 IGBT Transistors 600V 20A Hi Spd TrenchGate FieldStop
    STGWT40V60DF

    Mfr.#: STGWT40V60DF

    OMO.#: OMO-STGWT40V60DF

    		 IGBT Transistors 600V 40A High Speed Trench Gate IGBT
    STGWT40H60DLFB

    Mfr.#: STGWT40H60DLFB

    OMO.#: OMO-STGWT40H60DLFB

    		 IGBT Transistors 600V 40A HSpd trench gate field-stop IGBT
    STGWT60V60DF

    Mfr.#: STGWT60V60DF

    OMO.#: OMO-STGWT60V60DF-STMICROELECTRONICS

    		 IGBT Transistors 600V 60A Trench Gate Field-Stop IGBT
    STGWT30V60DF

    Mfr.#: STGWT30V60DF

    OMO.#: OMO-STGWT30V60DF-STMICROELECTRONICS

    		 IGBT Transistors 600V 30A High Speed Trench Gate IGBT
    STGWT40H60DLFB

    Mfr.#: STGWT40H60DLFB

    OMO.#: OMO-STGWT40H60DLFB-STMICROELECTRONICS

    		 IGBT Transistors 600V 40A HSpd trench gate field-stop IGBT
    STGWT80H65FB

    Mfr.#: STGWT80H65FB

    OMO.#: OMO-STGWT80H65FB-STMICROELECTRONICS

    		 IGBT Transistors IGBT & Power Bipola
    STGWT60H65FB

    Mfr.#: STGWT60H65FB

    OMO.#: OMO-STGWT60H65FB-STMICROELECTRONICS

    		 IGBT Transistors 650V 60A HSpd trench gate field-stop IGBT
    可用性
    库存:
    Available
    订购:
    5000
    输入数量:
    STGWT15H60F的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格（美元）
    数量
    单价
    小计金额
    1
    US$2.06
    US$2.06
    10
    US$1.75
    US$17.50
    100
    US$1.40
    US$140.00
    500
    US$1.22
    US$610.00
    1000
    US$1.01
    US$1 010.00
    2500
    US$0.95
    US$2 365.00
    5000
    US$0.91
    US$4 555.00
    10000
    US$0.88
    US$8 750.00
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